APTGT150SK170D1

APTGT150SK170D1 Trench IGBT Power Module Buck chopper ® VCES = 1700V IC = 150A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance • High level of integration • Kelvin emitter for easy drive • Low stray inductance - M5 power connectors Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat Q1 4 5 3 1 2 3 4 5 7 6 2 1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operation Area TC = 25°C Tj = 125°C V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTGT150SK170D1 – Rev 0 300A@1600V January, 2004 Continuous Collector Current TC = 25°C TC = 80°C TC = 25°C Max ratings 1700 280 150 300 ±20 780 Unit V A APTGT150SK170D1 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, IC = 4mA VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 150A Tj = 125°C VGE = VCE , IC = 6 mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 900V IC = 150A RG = 10Ω Inductive Switching (125°C) VGE = ±15V VBus = 900V IC = 150A RG = 10Ω Min 1700 Typ Max 4 2.4 6.4 200 Unit V mA V V nA 5.2 2.0 2.4 5.8 Dynamic Characteristics Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn Off Energy Min Typ 13 0.45 280 100 850 120 330 100 1000 200 47 Max Unit nF ns ns mJ Reverse diode ratings and characteristics Symbol Characteristic VF Er Qrr Diode Forward Voltage Reverse Recovery Energy Reverse Recovery Charge Test Conditions IF = 150A VGE = 0V IF = 150A VR = 900V di/dt =900A/µs IF = 150A VR = 900V di/dt =900A/µs Min Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Typ 1.8 1.9 17.5 35 37.5 62.5 Max 2.2 Unit V mJ µC Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol