APTGT150TDU60P
Triple Dual Common Source Trench + Field Stop IGBT® Power Module
C1 C3 C5
VCES = 600V IC = 150A @ Tc = 80°C
Applicatio n • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies
E5/E6
G1
G3
G5
E1 E1/E2
E3 E3/E4
E5
E2
E4
E6
G2 C2
G4 C4
G6 C6
Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Very low (12mm) profile • Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability
C1
C3
C5
G1 E1/E2 E1 E2 G2 E3/E4
G3 E3 E4 G4 E5/E6
G5 E5 E6 G6
C2
C4
C6
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 150°C
V W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-5
APTGT150TDU60P – Rev 0
Reverse Bias Safe Operating Area
300A @ 550V
May, 2005
Max ratings 600 225 150 350 ±20 480
Unit V A
APTGT150TDU60P
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0 V, VCE = 600V Tj = 25°C VGE =15V IC = 150A Tj = 150°C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0 V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 400 Unit µA V V nA
5.0
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy
Test Conditions VGE = 0 V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 150A R G = 6.8Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 150A R G = 6.8Ω
Min
Typ 9200 580 270 115 45 225 55 130 50 300 70 2.6 5.3
Max
Unit pF
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF(A V) VF trr Qrr Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Test Conditions VR=600V
50% duty cycle
Min 600 Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C
Typ
Max 250 500
Unit V µA A
IF = 150A VGE = 0 V IF = 150A VR = 300V
di/dt =2100A/µs
150 1.6 1.5 130 225 6.9 14.5
2
V ns µC
May, 2005
APT website – http://www.advancedpower.com
2-5
APTGT150TDU60P – Rev 0
APTGT150TDU60P
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 3 Min Typ Max 0.31 0.52 175 125 100 5 250 Unit °C/W V °C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol
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