APTGT200DA120D3

APTGT200DA120D3 Boost chopper ® Trench IGBT Power Module 3 VCES = 1200V IC = 200A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance - M6 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat Q2 6 7 1 2 3 4 5 7 6 2 1 Absolute maximum ratings Symbol VCES IC ICM VGE PD SCSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Short Circuit Safe Operating Area TC = 25°C Tj = 125°C V W 800A@900V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTGT200DA120D3 – Rev 0 January, 2004 TC = 25°C TC = 80°C TC = 25°C Max ratings 1200 300 200 400 ±20 1040 Unit V A APTGT200DA120D3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, IC = 6mA VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 200A Tj = 125°C VGE = VCE , IC = 6mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A RG = 3.6Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A RG = 3.6Ω Min 1200 Typ Max 6 2.1 6.5 600 Unit V mA V V nA 1.4 5.0 1.7 2.0 5.8 Dynamic Characteristics Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Min Typ 14 0.8 0.66 280 90 550 130 300 100 650 180 Max Unit nF ns ns Reverse diode ratings and characteristics Symbol Characteristic VF Erec Qrr Diode Forward Voltage Reverse Recovery Energy Reverse Recovery Charge Test Conditions IF = 200A VGE = 0V IF = 200A VR = 600V di/dt =900A/µs IF = 200A VR = 600V di/dt =900A/µs Min Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C Typ 1.6 1.6 17 20 36 Max 2.1 Unit V mJ µC Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol