APTGT200U170D4

APTGT200U170D4 Trench IGBT Power Module Single switch ® VCES = 1700V IC = 200A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance - M6 connectors for power - M4 connectors for signal • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat 1 3 5 2 2 4 5 1 3 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage A V W Reverse Bias Safe Operation Area Tj = 125°C 1600A@1700V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTGT200U170D4 – Rev 0 Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C January, 2004 Continuous Collector Current TC = 25°C TC = 80°C TC = 25°C Max ratings 1700 280 200 400 ±20 1250 Unit V APTGT200U170D4 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, IC = 10mA VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 200A Tj = 125°C VGE = VCE , IC = 10mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 900V IC = 200A RG = 5.6Ω Inductive Switching (125°C) VGE = ±15V VBus = 900V IC = 200A RG = 5.6Ω Min 1700 Typ Max 20 2.4 6.4 2000 Unit V mA V V nA 5.2 2.0 2.4 5.8 Dynamic Characteristics Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn Off Energy Min Typ 17.6 0.6 200 100 750 90 230 100 850 115 88 Max Unit nF ns ns mJ Reverse diode ratings and characteristics Symbol Characteristic VF Er Qrr Diode Forward Voltage Reverse Recovery Energy Reverse Recovery Charge Test Conditions IF = 200A VGE = 0V IF = 200A VR = 900V di/dt =990A/µs IF = 200A VR = 900V di/dt =990A/µs Min Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Typ 1.8 1.9 36 64 76 120 Max 2.2 Unit V mJ µC Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol