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APTGT300U120D4

APTGT300U120D4

  • 厂商:

    ADPOW

  • 封装:

  • 描述:

    APTGT300U120D4 - Single switch Trench IGBT Power Module - Advanced Power Technology

  • 数据手册
  • 价格&库存
APTGT300U120D4 数据手册
APTGT300U120D4 Single switch ® Trench IGBT Power Module 1 VCES = 1200V IC = 300A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance - M6 connectors for power - M4 connectors for signal • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat 3 5 2 2 4 5 1 3 Absolute maximum ratings Symbol VCES IC ICM VGE PD SCSOA Parameter Collector - Emitter Breakdown Voltage Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Short Circuit Safe Operating Area TC = 25°C Tj = 125°C V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTGT300U120D4 – Rev 0 1200A@900V January, 2004 Continuous Collector Current TC = 25°C TC = 80°C TC = 25°C Max ratings 1200 440 300 700 ±20 1380 Unit V A APTGT300U120D4 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, IC = 12mA VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 300A Tj = 125°C VGE = VCE , IC = 12mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 300A RG = 1Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 300A RG = 1Ω Min 1200 Typ Max 8 2.1 6.5 900 Unit V mA V V nA 5.0 1.7 2.0 5.8 Dynamic Characteristics Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Min Typ 21 1.1 1 280 90 550 130 290 100 650 180 Max Unit nF ns ns Reverse diode ratings and characteristics Symbol Characteristic VF Erec Qrr Diode Forward Voltage Reverse Recovery Energy Reverse Recovery Charge Test Conditions IF = 300A VGE = 0V IF = 300A VR = 600V di/dt =900A/µs IF = 300A VR = 600V di/dt =900A/µs Min Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C Typ 1.6 1.6 24 28 56 Max 2.1 Unit V mJ µC Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol
APTGT300U120D4 价格&库存

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