APTGT35X120BTP3

APTGT35X120RTP3 APTGT35X120BTP3 Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT® Power Module Application • AC Motor control VCES = 1200V IC = 35A @ Tc = 80°C Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring APTGT35X120RTP3: Without Brake (Pin 7 & 14 not connected) 21 20 19 18 17 16 15 14 13 12 11 10 • • • • Benefits 22 9 8 23 7 24 1 2 3 4 5 6 • • • • • • • • Low conduction losses Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile All ratings @ Tj = 25°C unless otherwise specified Symbol VRRM ID IFSM Parameter Repetitive Peak Reverse Voltage DC Forward Current Surge Forward Current tp = 10ms TC = 80°C Tj = 25°C Tj = 150°C Max ratings 1600 80 320 260 Unit V A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-4 APTGT35X120BTP3 – Rev 1 December, 2003 1. Absolute maximum ratings Diode rectifier Absolute maximum ratings APTGT35X120RTP3 APTGT35X120BTP3 IGBT & Diode Brake (only for APTGT35X120BTP3) Absolute maximum ratings Symbol VCES IC ICM VGE PD IF Parameter Collector - Emitter Breakdown Voltage TC = 25°C TC = 80°C TC = 25°C TC = 25°C TC = 80°C Max ratings 1200 40 25 65 ±20 160 15 Unit V A V W A Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation DC Forward Current Absolute maximum ratings IGBT & Diode Inverter Symbol VCES IC ICM VGE PD RBSOA IF IFRM Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Save Operating Area DC Forward Current Repetitive Peak Forward Current TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C TC = 80°C tp = 1ms Max ratings 1200 55 35 80 ±20 200 80A @ 1100V 35 50 Unit V A V W A 2. Electrical Characteristics Diodes Rectifier Electrical Characteristics Symbol IR VF RthJC Characteristic Reverse Current Forward Voltage Junction to Case Test Conditions VR = 1600V Tj = 150°C Tj = 150°C IF = 50A Min Typ 3 1.0 Max Unit mA V °C/W 0.65 IGBT Brake & Diode (only for APTGT35X120BTP3) Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Cies Coes Cres VF RthJC Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Voltage Junction to Case Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 25A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V VGE = 0V, VCE = 25V f = 1MHz Tj = 25°C VGE = 0V IF = 35A Tj = 125°C IGBT Diode Min 1.4 5.0 Typ 1.7 2.0 5.8 1808 95 82 2.3 2.5 Max 4 2.1 6.5 600 Unit mA V V nA APTGT35X120BTP3 – Rev 1 December, 2003 pF 2.7 0.6 1.5 V °C/W APT website – http://www.advancedpower.com 2-4 APTGT35X120RTP3 APTGT35X120BTP3 IGBT & Diode Inverter Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Cies Coss Crss Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff VF Qrr RthJC Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn off Energy Forward Voltage Reverse Recovery Charge Junction to Case Test Conditions VGE = 0V, IC = 3mA VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0V VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 40A RG = 27Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 40A RG = 27Ω VGE = 0V IF = 40A IF = 25A VR = 600V di/dt=990A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C IGBT Diode Min 1200 Typ Max 4 2.2 6.5 600 Unit V mA V V nA pF 5.0 1.8 2.1 5.8 2530 132 115 85 30 420 65 90 45 520 90 4.2 2.1 2.0 2 5 ns ns mJ V µC 0.6 0.95 °C/W Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25°C B 25/50 T25 = 298.16 K Min Typ 5 3375 Max Unit kΩ K RT = R25 exp B25 / 50 11 − T25 T T: Thermistor temperature RT: Thermistor value at T 2500 -40 -40 -40 150 125 125 3.3 300 V °C N.m g M5 APT website – http://www.advancedpower.com 3-4 APTGT35X120BTP3 – Rev 1 December, 2003 Symbol Characteristic RMS Isolation Voltage, any terminal to case t =1 min, VISOL I isol