APTGT400U170D4G

APTGT400U170D4G Single switch Trench + Field Stop IGBT® Power Module 1 VCES = 1700V IC = 400A @ Tc = 80°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance • High level of integration • Kelvin emitter for easy drive • Low stray inductance - M6 connectors for power - M4 connectors for signal Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC o f VCEsat • RoHS Compliant 3 5 2 2 4 5 1 3 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Reverse Bias Safe Operation Area 800A@1650V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGT400U170D4G – Rev 1 Max ratings 1700 800 400 800 ±20 2080 Unit V A V W March, 2006 APTGT400U170D4G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Test Conditions Min Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current VGE = 0 V, VCE = 1700V Tj = 25°C VGE = 15V IC = 400A Tj = 125°C VGE = VCE , IC = 16 mA VGE = 20V, VCE = 0 V Test Conditions VGE = 0 V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 900V IC = 400A R G = 3.6Ω Inductive Switching (125°C) VGE = ±15V VBus = 900V IC = 400A R G = 3.6Ω VGE = ±15V Tj = 125°C VBus = 900V IC = 400A Tj = 125°C R G = 3.6Ω Typ 2.0 2.4 5.8 Max 1 2.4 6.4 400 Unit mA V V nA 5.2 Dynamic Characteristics Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn On Energy Turn Off Energy Min Typ 33 1.2 250 100 850 120 300 100 1000 200 150 125 Max Unit nF ns ns mJ Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Er trr Qrr Maximum Reverse Leakage Current DC forward current Diode Forward Voltage Reverse Recovery Energy Reverse Recovery Time Reverse Recovery Charge Test Conditions VR=1700V IF = 400A VGE = 0 V IF = 400A VR = 900V di/dt =4200A/µs Min 1700 Tj = 25°C Tj = 125°C Tc=80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Typ Max 750 1000 Unit V µA A APT website – http://www.advancedpower.com 2-5 APTGT400U170D4G – Rev 1 March, 2006 400 1.8 1.9 50 100 420 525 100 170 2.2 V mJ ns µC APTGT400U170D4G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight M6 M4 IGBT Diode 3500 -40 -40 -40 3 1 Min Typ Max 0.06 0.09 150 125 125 5 2 420 Unit °C/W RMS Isolation Voltage, any terminal to case t =1 min, I isol