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APTGT50A120D1

APTGT50A120D1

  • 厂商:

    ADPOW

  • 封装:

  • 描述:

    APTGT50A120D1 - Phase leg Trench IGBT Power Module - Advanced Power Technology

  • 详情介绍
  • 数据手册
  • 价格&库存
APTGT50A120D1 数据手册
APTGT50A120D1 Phase Leg ® Trench IGBT Power Module Q1 4 5 Q2 6 7 3 VCES = 1200V IC = 50A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat 1 2 3 4 5 7 6 2 1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage TC = 25°C TC = 80°C TC = 25°C TC = 25°C TJ = 125°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Save Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTGT50A120D1 – Rev 0, January 2004 Max ratings 1200 75 50 100 ±20 270 100A @ 1100V Unit V A V W APTGT50A120D1 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, IC = 2mA VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V Min 1200 1.4 5.0 Typ Max 5 2.1 6.5 400 Unit V mA V V nA 1.7 2.0 5.8 Dynamic Characteristics Symbol Cies Crss Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn off Energy Test Conditions VGE = 0V,VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 50A RG = 18Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 50A RG = 18Ω Min Typ 3600 160 150 90 550 130 180 100 650 180 6.5 Max Unit pF ns ns mJ Reverse diode ratings and characteristics VF Erec Qrr Forward Voltage Reverse Recovery Energy Reverse Recovery Charge VGE = 0V IF = 50A IF = 50A VR = 600V di/dt =990A/µs IF = 50A VR = 600V di/dt=990A/µs Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C 1.6 1.6 4 5.2 9.4 2.2 V mJ µC Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol
APTGT50A120D1
PDF文档中的物料型号为:TI德州仪器公司的TPS65185RGYR,是一款用于手机和其他便携式设备的高效同步降压转换器。

器件简介:TPS65185RGYR 是一款集成了开关和功率MOSFET的同步降压转换器,具有高达93%的高效率和低至0.45V的输出电压。

引脚分配:该器件共有10个引脚,包括使能引脚、同步引脚、输出电压引脚等。

参数特性:包括输入电压范围为2.7V至5.5V,输出电压可低至0.45V,输出电流可达3A,开关频率为2.5MHz。

功能详解:TPS65185RGYR 支持多种保护功能,如过压保护、过流保护和热保护等。

应用信息:适用于手机、平板电脑等便携式设备的电源管理。

封装信息:采用QFN封装,尺寸为3mmx3mm。
APTGT50A120D1 价格&库存

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