APTGT50DA120D1

APTGT50DA120D1 Boost chopper ® Trench IGBT Power Module 3 VCES = 1200V IC = 50A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance - M5 power connectors • High level of integration Q2 6 7 1 2 3 4 5 7 6 2 1 Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage TC = 25°C TC = 80°C TC = 25°C TC = 25°C TJ = 125°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Save Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTGT50DA120D1 – Rev 0, January 2004 Max ratings 1200 75 50 100 ±20 270 100A @ 1100V Unit V A V W APTGT50DA120D1 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, IC = 2mA VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V Min 1200 1.4 5.0 Typ Max 5 2.1 6.5 400 Unit V mA V V nA 1.7 2.0 5.8 Dynamic Characteristics Symbol Cies Crss Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn off Energy Test Conditions VGE = 0V,VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 50A RG = 18Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 50A RG = 18Ω Min Typ 3600 160 150 90 550 130 180 100 650 180 6.5 Max Unit pF ns ns mJ Reverse diode ratings and characteristics VF Erec Qrr Forward Voltage Reverse Recovery Energy Reverse Recovery Charge VGE = 0V IF = 50A IF = 50A VR = 600V di/dt =990A/µs IF = 50A VR = 600V di/dt=990A/µs Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C 1.6 1.6 4 5.2 9.4 2.2 V mJ µC Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol