APTGT50DSK120T3

APTGT50DSK120T3 Dual Buck chopper 13 14 Trench IGBT® Power Module VCES = 1200V IC = 50A @ Tc = 80°C Applicatio n • AC and DC motor control • Switched Mode Power Supplies Q1 18 19 Q2 11 10 22 23 7 8 CR2 CR1 29 15 30 31 R1 32 16 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance • High level of integration • Internal thermistor for temperature monitoring Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a single buck of twice the current capability. 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Save Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C TJ = 125°C A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGT50DSK120T3 – Rev 0, September, 2004 Parameter Collector - Emitter Breakdown Voltage Max ratings 1200 75 50 100 ±20 270 100A @ 1150V Unit V APTGT50DSK120T3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic B VCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Symbol Cies Crss Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0 V, IC = 2 mA VGE = 0 V, VCE = 1200V Tj = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0 V Test Conditions VGE = 0 V,VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 50A R G = 18Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 50A R G = 18Ω Min 1200 1.4 5.0 Typ Max 5 2.1 6.5 400 Max Unit V mA V V nA Unit pF 1.7 2.0 5.8 Dynamic Characteristics Min Typ 3600 160 90 30 420 70 90 50 520 90 5 5.5 ns ns mJ Eon includes diode reverse recovery In accordance with JEDEC standard JESD24-1 Diode ratings and characteristics Symbol Characteristic VRRM IRM IF(A V) VF Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 70°C Min 1200 Typ Max 250 500 Unit V µA A Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage VR=1200V 50% duty cycle IF = 60A IF = 120A IF = 60A IF = 60A VR = 800V di/dt =200A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 60 2 2.3 1.8 400 470 1200 4000 2.5 V September, 2004 2-5 APTGT50DSK120T3 – Rev 0, trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC APT website – http://www.advancedpower.com APTGT50DSK120T3 Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K Min Typ 68 4080 Max Unit kΩ K RT = R 25   1 1  RT : Thermistor value at T exp B 25 / 85    T − T    25  T: Thermistor temperature Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode Min Typ Max 0.45 0.9 150 125 100 4.7 110 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol