APTGT50TDU170P

APTGT50TDU170P Triple Dual Common Source Trench IGBT® Power Module C1 C3 C5 VCES = 1700V IC = 50A @ Tc = 80°C Applicatio n • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies G1 G3 G5 E1 E1/E2 E3 E3/E4 E5 E5/E6 E2 E4 E6 G2 C2 G4 C4 G6 C6 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Kelvin emitter for easy drive Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Very low (12mm) profile • Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability Max ratings 1700 70 50 100 ±20 310 100A @ 1600V Unit V A V W September, 2004 1-5 APTGT50TDU170P – Rev 0, C1 C3 C5 G1 E1/E2 E1 E2 G2 E3/E4 G3 E3 E4 G4 E5/E6 G5 E5 E6 G6 C2 C4 C6 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Save Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed APT website – http://www.advancedpower.com APTGT50TDU170P All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic B VCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0 V, IC = 2.5mA VGE = 0 V, VCE = 1700V Tj = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE , IC = 2.5 mA VGE = 20V, VCE = 0 V Min 1700 Typ Max 5 Unit V mA V V nA 2.0 2.4 5.0 2.4 6.5 600 Dynamic Characteristics Symbol Cies Crss Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0 V ;VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 900V IC = 50A R G = 22Ω Inductive Switching (125°C) VGE = ±15V VBus = 900V IC = 50A R G = 22Ω Diode Min Typ 4400 150 200 90 720 90 220 90 820 110 29 22 Max Unit pF ns ns mJ Eon includes diode reverse recovery In accordance with JEDEC standard JESD24-1 Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM VF Qrr Maximum Reverse Leakage Current Diode Forward Voltage Reverse Recovery Charge Test Conditions VR=1700V IF = 50A VGE = 0 V IF = 50A VR = 900V di/dt =990A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min 1700 Typ Max 250 500 2.2 Unit V µA V µC September, 2004 2-5 APTGT50TDU170P – Rev 0, 1.8 1.9 19 30 APT website – http://www.advancedpower.com APTGT50TDU170P Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 3500 -40 -40 -40 3 Min Typ Max 0.4 0.7 150 125 100 5 250 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol