APTGT75X120BTP3

APTGT75X120RTP3 APTGT75X120BTP3 Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT® Power Module Application • AC Motor control VCES = 1200V IC = 75A @ Tc = 80°C Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring • • • • APTGT75X120RTP3: Without Brake (Pin 7 & 14 not connected) 21 20 19 18 17 16 15 14 13 12 11 10 Benefits • • • • • • • • Low conduction losses Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile 22 9 8 23 7 24 1 2 3 4 5 6 All ratings @ Tj = 25°C unless otherwise specified September 2003 1-4 APTGT75X120BTP3 – Rev 0, 1. Absolute maximum ratings Diode rectifier Absolute maximum ratings Symbol VRRM ID IFSM Parameter Repetitive Peak Reverse Voltage DC Forward Current Surge Forward Current tp = 10ms TC = 80°C Tj = 25°C Tj = 150°C Max ratings 1600 80 500 400 Unit V A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com APTGT75X120RTP3 APTGT75X120BTP3 IGBT & Diode Brake (only for APTGT75X120BTP3) Absolute maximum ratings Symbol VCES IC ICM VGE PD IF Parameter Collector - Emitter Breakdown Voltage TC = 25°C TC = 80°C TC = 25°C TC = 25°C TC = 80°C Max ratings 1200 60 50 100 ±20 200 25 Unit V A V W A Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation DC Forward Current Absolute maximum ratings IGBT & Diode Inverter Symbol VCES IC ICM VGE PD RBSOA IF IFRM Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Save Operating Area DC Forward Current Repetitive Peak Forward Current TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C TC = 80°C tp = 1ms Max ratings 1200 105 75 150 ±20 350 150A @ 1100V 75 150 Unit V A V W A 2. Electrical Characteristics Diodes Rectifier Electrical Characteristics Symbol IR VF RthJC Characteristic Reverse Current Forward Voltage Junction to Case Test Conditions VR = 1600V Tj = 150°C Tj = 150°C IF = 75A Min Typ 3 1.2 Max Unit mA V °C/W 0.65 IGBT Brake & Diode (only for APTGT75X120BTP3) Electrical Characteristics Symbol Characteristic ICES VCE(on) VGE(th) IGES Cies Coes Cres VF RthJC Test Conditions Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Voltage Junction to Case VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 50A Tj = 125°C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V VGE = 0V, VCE = 25V f = 1MHz Tj = 25°C VGE = 0V IF = 25A Tj = 125°C IGBT Diode Min 1.4 5.0 Typ 400 1.7 2.0 5.8 3600 188 163 1.6 1.8 Max 2.1 6.5 600 Unit µA V V nA pF V September 2003 2-4 APTGT75X120BTP3 – Rev 0, 0.6 1.2 °C/W APT website – http://www.advancedpower.com APTGT75X120RTP3 APTGT75X120BTP3 IGBT & Diode Inverter Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Cies Coss Crss Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff VF Qrr RthJC Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn off Energy Forward Voltage Reverse Recovery Charge Junction to Case Test Conditions VGE = 0V, IC = 500µA VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 75A Tj = 125°C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 75A RG = 4.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 75A RG = 4.7Ω VGE = 0V IF = 75A IF = 75A VR = 600V di/dt=825A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C IGBT Diode Min 1200 Typ 4 1.7 2.0 5.8 5345 280 242 260 30 420 65 285 45 520 90 9.4 1.6 1.6 8 14 Max Unit V mA V V nA pF 2.1 6.5 500 5.0 ns ns mJ 2.2 V µC 0.35 0.58 °C/W Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25°C B 25/50 T25 = 298.16 K Min Typ 5 3375 Max Unit kΩ K RT = R25 exp B25 / 50 11 − T25 T T: Thermistor temperature RT: Thermistor value at T M5 N.m g APT website – http://www.advancedpower.com 3-4 APTGT75X120BTP3 – Rev 0, Symbol Characteristic RMS Isolation Voltage, any terminal to case t =1 min, VISOL I isol