APTM08TDUM04P
Triple dual common source
VDSS = 75V RDSon = 04mΩ max @ Tj = 25°C ID = 120A @ Tc = 25°C
Applicatio n • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies
S5/S6
MOSFET Power Module
D1 D3 D5
G1
G3
G5
S1 S1/S2
S3 S3/S4
S5
S2 G2
S4 G4
S6 G6
D2
D4
D6
Features • Power MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Very low (12mm) profile • Each leg can be easily paralleled to achieve a phase leg of three times the current capability
D1
D3
D5
G1 S1/S2 S1 S2 G2 S3/S4
G3 S3 S4 G4 S5/S6
G5 S5 S6 G6
D2
D4
D6
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C
Tc = 25°C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM08TDUM04P – Rev 0
Max ratings 75 120 90 250 ±30 04 138 75 50 1500
Unit V
September, 2004
A V mΩ W A
APTM08TDUM04P
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol B VDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0 V, ID = 1 mA Min 75
VGS = 0V,VDS = 75V VGS = 0V,VDS = 60V
Typ
Max 100 250 04 4 ±100
Unit V µA mΩ V nA
Tj = 25°C Tj = 125°C 2
VGS = 10V, ID = 60A VGS = VDS, ID = 1 mA VGS = ±30 V, VDS = 0 V
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 60V ID =120A Inductive switching @ 125°C VGS = 15V VBus = 40V ID = 120A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 40V ID = 120A, R G = 5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 40V ID = 120A, R G = 5 Ω
Min
Typ 4530 1080 450 153 25 82 35 60 100 65 290 317 319 336
Max
Unit pF
nC
ns
µJ
µJ
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions
Min
Typ
Tc = 25°C Tc = 80°C VGS = 0 V, IS = - 120A IS = - 120A VR = 40V diS/dt = 100A/µs Tj = 25°C Tj = 25°C 100 300
Max 120 90 1.3 6 200
Unit A V V/ns ns
September, 2004 2–6 APTM08TDUM04P – Rev 0
nC
Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 120A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C
APT website – http://www.advancedpower.com
APTM08TDUM04P
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case IGBT 2500 -40 -40 -40 3
RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle
160 120 80
T J=25°C
40 0 0 1 2 3 4 5 6 7 VGS , Gate to Source Voltage (V) 8
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 140 120 100 80 60 40 20 0 25 50 75 100 125 150
1.1 1
VGS =10V
VGS=20V
0.9 0.8 0 50 100 150 200 250 ID, Drain Current (A)
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
4–6
APTM08TDUM04P – Rev 0
September, 2004
APTM08TDUM04P
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 1000
limited by RDSon
VGS=10V ID= 60A
100µs
100
1ms
10 Single pulse TJ=150°C 1 1 10 100 VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 50 100 150 200
September, 2004 5–6 APTM08TDUM04P – Rev 0
V DS =60V ID=120A T J=25°C V DS =15V
10000
Ciss
1000
Coss Crss
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
Gate Charge (nC)
APT website – http://www.advancedpower.com
APTM08TDUM04P
Delay Times vs Current 120 100 t d(on) and td(off) (ns) 80 60 40 20 0 25 50 75 100 125 150 175 200 I D, Drain Current (A)
VDS=40V RG=5Ω T J=125°C L=100µH
Rise and Fall times vs Current 120
V DS=40V R G=5Ω T J=125°C L=100µH
td(off) t r and tf (ns)
100 80 60 40 20 0 25
tf tr
t d(on)
50
75 100 125 150 175 200 ID, Drain Current (A)
Switching Energy vs Current 0.75 Eoff Switching Energy (mJ)
V DS =40V RG =5Ω T J=125°C L=100µH
Switching Energy vs Gate Resistance 1.5
VDS=40V ID=120A TJ=125°C L=100µH
Eon and Eoff ( mJ)
0.5
1
Eoff
Eon 0.25
0.5
Eon
0 25 50 75 100 125 150 175 200 I D, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 300 250 Frequency (kHz) 200 150 100 50 0 20 40 60 80 100 120 I D, Drain Current (A)
VDS=40V D=50% RG=5Ω TJ=125°C TC=75°C ZCS ZVS
0 0 10 20 30 40 50 60 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000
100
TJ=150°C
TJ=25°C
10
Hard switching
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
September, 2004 6–6 APTM08TDUM04P – Rev 0
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com