APTM100H18F

APTM100H18F Full - Bridge MOSFET Power Module VB US Q1 Q3 VDSS = 1000V RDSon = 180mΩ max @ Tj = 25°C ID = 43A @ Tc = 25°C Applicatio n • • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control G1 OUT1 OUT2 G3 S1 Q2 S3 Q4 Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration G2 G4 S2 0/VBUS S4 • • OUT1 G1 S1 VBUS 0/VBUS G2 S2 • Benefits • • • • S3 G3 OUT2 S4 G4 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM100H18F– Rev 0 Max ratings 1000 43 33 172 ±30 180 780 25 50 3000 Unit V A V mΩ W A mJ July, 2004 APTM100H18F All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol B VDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0 V, ID = 500µA Min 1000 VGS = 0V,VDS = 1000V VGS = 0V,VDS = 800V T j = 25°C T j = 125°C Typ Max 500 2000 180 5 ±150 Unit V µA mΩ V nA VGS = 10V, ID = 21.5A VGS = VDS, ID = 5 mA VGS = ±30 V, VDS = 0 V 3 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 43A Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 43A R G = 2.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 43A, R G = 2.5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 43A, R G = 2.5 Ω Min Typ 10.4 1.76 0.32 372 48 244 18 12 155 40 1800 1246 2846 1558 Max Unit nF nC ns µJ µJ Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C Min Typ VGS = 0 V, IS = - 43A IS = - 43A VR = 500V diS/dt = 200A/µs IS = - 43A VR = 500V diS/dt = 200A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 7.2 19.5 Max 43 33 1.3 18 320 650 Unit A V V/ns ns µC July, 2004 2–6 APTM100H18F– Rev 0 Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 43A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C APT website – http://www.advancedpower.com APTM100H18F Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle I D, Drain Current (A) 100 80 60 40 20 0 0 5 10 15 20 7V 6.5V 6V 5.5V 5V 25 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A) Normalized to VGS =10V @ 21.5A VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 45 40 35 30 25 20 15 10 5 0 25 50 75 100 125 150 RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 VGS=10V VGS=20V 20 40 60 80 100 120 ID, Drain Current (A) TC, Case Temperature (°C) July, 2004 APT website – http://www.advancedpower.com 4–6 APTM100H18F– Rev 0 APTM100H18F RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) Ciss 10000 Coss 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 14 12 10 8 6 4 2 0 0 100 200 300 400 500 Gate Charge (nC) I D=43A TJ=25°C VDS=200V VDS=500V VDS=800V ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS =10V ID=21.5A 1000 100µs 100 limited by R DSon 1ms 10 Single pulse TJ =150°C 1 1 10 100 1000 VDS , Drain to Source Voltage (V) 10ms Gate Charge vs Gate to Source Voltage APT website – http://www.advancedpower.com 5–6 APTM100H18F– Rev 0 July, 2004 APTM100H18F Delay Times vs Current 200 td(on) and td(off) (ns) 160 120 80 40 0 10 30 50 70 90 I D, Drain Current (A) Switching Energy vs Current V DS=670V RG =2.5Ω T J=125°C L=100µH Rise and Fall times vs Current 80 V DS =670V RG =2.5Ω T J=125°C L=100µH t d(off) tr and tf ( ns) tf 60 40 tr 20 t d(on) 0 10 30 50 70 I D, Drain Current (A) 90 Switching Energy vs Gate Resistance 5 Switching Energy (mJ) 7 Switching Energy (mJ) VDS=670V RG=2.5Ω TJ=125°C L=100µH Eon 4 3 2 1 0 6 5 4 3 2 1 0 0 Eoff V DS =670V ID=43A T J=125°C L=100µH Eoff Eon 10 30 50 70 90 5 10 15 20 I D, Drain Current (A) Operating Frequency vs Drain Current I DR, Reverse Drain Current (A) Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 250 200 Frequency (kHz) ZVS ZCS 1000 100 150 100 50 0 10 15 VDS=670V D=50% RG=2.5Ω T J=125°C Tc=75°C TJ=150°C TJ=25°C 10 Hard switching 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) 20 25 30 35 ID, Drain Current (A) 40 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM100H18F– Rev 0 July, 2004