APTM100H45ST

APTM100H45ST Full bridge Series & parallel diodes MOSFET Power Module VBUS CR1A CR3A VDSS = 1000V RDSon = 450mΩ max @ Tj = 25°C ID = 18A @ Tc = 25°C Applicatio n • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Q1 CR1B CR3B Q3 G1 S1 CR2A O UT1 OUT2 CR4A G3 S3 Q2 CR2B CR4B Q4 G2 S2 NTC1 0/VBUS NTC2 G4 S4 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile G3 S3 G4 S4 OUT2 VBUS 0/VBUS OUT1 S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM100H45ST – Rev 2 Max ratings 1000 18 14 72 ±30 450 357 18 50 2500 Unit V A V mΩ W A mJ June, 2004 APTM100H45ST All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic B VDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0 V, ID = 250µA Min 1000 VGS = 0V,VDS= 1000V VGS = 0V,VDS= 800V Tj = 25°C Tj = 125°C Typ Max 100 500 450 5 ±100 Unit V µA mΩ V nA VGS = 10V, ID = 9 A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0 V 3 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 18A Inductive switching @ 125°C VGS = 15V VBus = 667V ID = 18A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 667V ID = 18A, R G = 5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 667V ID = 18A, R G = 5 Ω Min Typ 4350 715 120 154 26 97 10 12 121 35 639 380 1046 451 Max Unit pF nC ns µJ µJ Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. Series diode ratings and characteristics Symbol Characteristic IF(A V) Maximum Average Forward Current VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 30A IF = 60A IF = 30A IF = 30A VR = 133V di/dt = 200A/µs IF = 30A VR = 133V di/dt = 200A/µs Min Tc = 85°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Typ 30 1.1 1.4 0.9 24 48 33 150 Max 1.15 Unit A V June, 2004 2–6 APTM100H45ST – Rev 2 trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC APT website – http://www.advancedpower.com APTM100H45ST Parallel diode ratings and characteristics Symbol Characteristic IF(A V) Maximum Average Forward Current VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 30A IF = 60A IF = 30A IF = 30A VR = 667V di/dt = 200A/µs IF = 30A VR = 667V di/dt = 200A/µs Min Tc = 65°C Typ 30 1.9 2.2 1.7 290 390 670 2350 Max 2.3 V Unit A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC Thermal and package characteristics Symbol Characteristic RthJC Junction to Case VISOL TJ TSTG TC Torque Wt Transistor Diode Min Typ Max 0.35 1.2 150 125 100 4.7 160 Unit °C/W V °C N.m g Unit kΩ K RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 20 18 16 14 12 10 8 6 4 2 0 25 50 75 100 125 150 June, 2004 4–6 APTM100H45ST – Rev 2 RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 VGS=10V VGS=20V 10 20 30 40 50 ID, Drain Current (A) TC, Case Temperature (°C) APT website – http://www.advancedpower.com APTM100H45ST RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 14 12 10 8 6 4 2 0 0 40 80 120 160 200 Gate Charge (nC) June, 2004 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS =10V ID=9A 100 limited by RDSon 100µs 10 1ms Single pulse TJ=150°C 1 1 10ms 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=18A TJ=25°C VDS=200V V DS =500V VDS=800V 10000 Ciss Coss Crss 1000 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) APT website – http://www.advancedpower.com 5–6 APTM100H45ST – Rev 2 APTM100H45ST Delay Times vs Current 160 140 td(on) and td(off) (ns) 120 100 80 60 40 20 0 5 10 15 20 25 30 35 40 I D, Drain Current (A) Switching Energy vs Current td(on) 10 0 5 10 15 20 25 30 ID, Drain Current (A) 35 40 VDS=667V RG=5Ω TJ=125°C L=100µH Rise and Fall times vs Current 60 V DS =667V RG =5Ω T J=125°C L=100µH t d(off) tr and tf ( ns) 50 40 30 20 tf tr Switching Energy vs Gate Resistance 2.5 Switching Energy (mJ) V DS =667V ID=18A T J=125°C L=100µH 2 Switching Energy (mJ) 1.5 1 V DS =667V RG =5Ω T J=125°C L=100µH Eon Eoff 2 1.5 1 0.5 0 Eon Eoff 0.5 0 5 10 15 20 25 30 35 40 I D, Drain Current (A) Operating Frequency vs Drain Current VDS=667V D=50% RG=5Ω T J=125°C 0 5 10 15 20 25 30 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage I DR, Reverse Drain Current (A) 1000 250 200 Frequency (kHz) 150 100 50 0 6 8 10 12 14 16 ID, Drain Current (A) 18 100 TJ =150°C 10 TJ =25°C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) June, 2004 APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM100H45ST – Rev 2 APT reserves the right to change, without notice, the specifications and information contained herein