APTM100TA35FP

APTM100TA35FP Triple phase leg MOSFET Power Module VBUS1 VBUS2 VBUS3 VDSS = 1000V RDSon = 350mΩ max @ Tj = 25°C ID = 22A @ Tc = 25°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control G1 G3 G5 S1 U S3 V S5 W G2 G4 G6 S2 0/VBUS1 S4 0/VBUS2 S6 0/VBUS3 Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Very low (12mm) profile • Each leg can be easily paralleled to achieve a phase leg of three times the current capability • Module can be configured as a three phase bridge • Module can be configured as a boost followed by a full bridge Max ratings 1000 22 17 88 ±30 350 390 25 50 3000 Unit V A V mΩ W A mJ APTM100TA35FP– Rev 0 September, 2004 VBUS 1 VBUS 2 VBUS 3 G1 0/VBUS 1 S1 S2 G2 0/VBUS 2 G3 S3 S4 G4 0/VBUS 3 G5 S5 S6 G6 U V W Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM100TA35FP All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol B VDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0 V, ID = 250µA Min 1000 VGS = 0V,VDS = 1000V VGS = 0V,VDS = 800V T j = 25°C T j = 125°C Typ Max 250 1000 350 5 ±100 Unit V µA mΩ V nA VGS = 10V, ID = 11A VGS = VDS, ID = 2.5mA VGS = ±30V, VDS = 0 V 3 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 22A Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 22A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 22A, R G = 5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 22A, R G = 5 Ω Min Typ 5.2 0.88 0.16 186 24 122 18 12 155 40 900 623 1423 779 Max Unit nF nC ns µJ µJ Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C Min Typ VGS = 0 V, IS = - 22A IS = - 22A VR = 500V diS/dt = 100A/µs IS = - 22A VR = 500V diS/dt = 100A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 3.6 9.72 Max 22 17 1.3 18 320 650 Unit A V V/ns ns µC APTM100TA35FP– Rev 0 September, 2004 Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 22A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C APT website – http://www.advancedpower.com 2–6 APTM100TA35FP Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case IGBT 2500 -40 -40 -40 3 RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle I D, Drain Current (A) 50 40 30 20 10 0 0 5 10 15 20 7V 6.5V 6V 5.5V 5V 25 VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A) Normalized to VGS=10V @ 11A VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 25 20 15 10 5 0 RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 VGS=10V VGS=20V 10 20 30 40 50 60 25 50 75 100 125 150 APTM100TA35FP– Rev 0 September, 2004 ID, Drain Current (A) TC, Case Temperature (°C) APT website – http://www.advancedpower.com 4–6 APTM100TA35FP RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 14 12 10 8 6 4 2 0 0 50 100 150 200 250 APTM100TA35FP– Rev 0 September, 2004 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS =10V ID=11A 100 limited by RDSon 100µs 10 1ms Single pulse TJ=150°C 1 1 10ms 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage I D=22A TJ=25°C VDS=200V VDS=500V V DS =800V 10000 Ciss 1000 Coss Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) Gate Charge (nC) APT website – http://www.advancedpower.com 5–6 APTM100TA35FP Delay Times vs Current 180 160 td(on) and td(off) (ns) 140 tr and tf ( ns) 120 100 80 60 40 20 0 0 10 20 30 40 50 ID, Drain Current (A) Switching Energy vs Current V DS=670V RG=5Ω T J=125°C L=100µH Rise and Fall times vs Current 80 t d(off) 70 60 50 40 30 20 10 0 0 10 20 30 40 I D, Drain Current (A) 50 tr VDS=670V RG=5Ω TJ=125°C L=100µH tf td(on) Switching Energy vs Gate Resistance 4 Switching Energy (mJ) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 Eon VDS=670V ID=22A TJ=125°C L=100µH 2.5 Switching Energy (mJ) 2 1.5 1 0.5 0 0 V DS=670V RG=5Ω T J=125°C L=100µH Eon Eoff E off 10 20 30 40 50 ID, Drain Current (A) Operating Frequency vs Drain Current ZVS Gate Resistance (Ohms) Source to Drain Diode Forward Voltage I DR, Reverse Drain Current (A) 1000 Frequency (kHz) 250 225 200 175 150 125 100 75 50 25 0 5 ZCS 100 TJ=150°C 10 TJ=25°C VDS=670V D=50% RG=5Ω T J=125°C T C=75°C Hard switching 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 APTM100TA35FP– Rev 0 September, 2004 8 10 13 15 18 ID, Drain Current (A) 20 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6