APTM100UM65S-ALN

APTM100UM65S-AlN Single switch Series & parallel diodes MOSFET Power Module SK CR1 D VDSS = 1000V RDSon = 65mΩ typ @ Tj = 25°C ID = 145A @ Tc = 25°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance S Q1 G S D SK G Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM100UM65S-AlN – Rev 1 July, 2005 Max ratings 1000 145 110 580 ±30 78 3250 30 50 3200 Unit V A V mΩ W A APTM100UM65S-AlN All ratings @ Tj = 25°C unless otherwise specified Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Electrical Characteristics Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS= 1000V VGS = 0V,VDS= 800V Tj = 25°C Tj = 125°C Min Typ VGS = 10V, ID = 72.5A VGS = VDS, ID = 20mA VGS = ±30 V, VDS = 0 V 65 3 Max 400 2 78 5 ±400 Unit µA mA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 145A VGS = 15V VBus = 500V ID = 145A R G = 0.75Ω Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 145A, R G = 0.75 Ω Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 145A, R G = 0.75 Ω Min Typ 28.5 5.08 0.9 1068 136 692 18 14 140 55 4.8 2.9 8 3.9 Max Unit nF nC ns mJ mJ Eon includes diode reverse recovery Series diode ratings and characteristics Symbol Characteristic VRRM IRM IF(A V) VF Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C T c = 80°C Min 200 Typ Max 350 600 Unit V µA A Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage VR=200V 50% duty cycle Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C trr Qrr Reverse Recovery Time Reverse Recovery Charge 31 60 120 500 IF = 120A VR = 133V di/dt = 400A/µs ns nC APT website – http://www.advancedpower.com 2–6 APTM100UM65S-AlN – Rev 1 July, 2005 IF = 120A IF = 240A IF = 120A 120 1.1 1.4 0.9 1.15 V APTM100UM65S-AlN Parallel diode ratings and characteristics Symbol Characteristic VRRM IRM IF(A V) VF trr Qrr Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C Min 1000 Typ Max 750 1000 Unit V µA A Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage VR=1000V 50% duty cycle IF = 240A IF = 480A IF = 240A IF = 240A VR = 667V di/dt = 800A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min Transistor Series diode Parallel diode 2500 -40 -40 -40 3 2 240 2 2.2 1.7 280 350 3.04 14.4 Typ 2.5 V Reverse Recovery Time Reverse Recovery Charge ns µC Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Max 0.038 0.46 0.23 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I sol I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 7V 6.5V 400 320 240 160 80 0 TJ=25°C TJ =125°C 0 1 2 3 4 5 TJ=-55°C 6 7 8 30 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A) Normalized to VGS =10V @ 72.5A VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 160 120 80 40 0 RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 VGS=10V VGS=20V 80 160 240 320 25 50 75 100 125 150 APTM100UM65S-AlN – Rev 1 July, 2005 ID, Drain Current (A) TC, Case Temperature (°C) APT website – http://www.advancedpower.com 4–6 APTM100UM65S-AlN RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 Ciss C, Capacitance (pF) 10000 14 12 10 8 6 4 2 0 0 300 600 900 1200 1500 APTM100UM65S-AlN – Rev 1 July, 2005 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS =10V ID=72.5A 1000 limited by R DSon 100µs 100 1ms 10 Single pulse TJ=150°C 1 1 10ms 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=145A TJ=25°C VDS=200V VDS=500V V DS =800V Coss 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) Gate Charge (nC) APT website – http://www.advancedpower.com 5–6 APTM100UM65S-AlN Delay Times vs Current 160 t d(off) td(on) and td(off) (ns) 120 V DS=670V RG=0.75Ω T J=125°C L=100µH Rise and Fall times vs Current 100 80 V DS =670V RG =0.75Ω T J=125°C L=100µH tf tr and tf (ns) 60 40 20 0 tr 80 40 t d(on) 0 50 94 138 182 226 270 ID, Drain Current (A) Switching Energy vs Current 50 94 138 182 226 I D, Drain Current (A) 270 Switching Energy vs Gate Resistance 16 Switching Energy (mJ) 12 10 8 6 4 2 0 50 94 138 182 226 270 ID, Drain Current (A) Operating Frequency vs Drain Current 26 Switching Energy (mJ) VDS=670V RG=0.75Ω TJ=125°C L=100µH 14 Eon 22 18 14 10 6 2 0 V DS=670V ID=145A T J=125°C L=100µH Eoff Eoff Eon 1 2 3 4 5 6 7 8 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 250 Frequency (kHz) ZVS IDR, Reverse Drain Current (A) 300 1000 200 150 100 50 0 15 35 VDS=670V D=50% RG=0.75Ω T J=125°C T C=75°C ZCS 100 TJ=150°C TJ=25°C 10 Hard switching 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 APTM100UM65S-AlN – Rev 1 July, 2005 55 75 95 115 ID, Drain Current (A) 135 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6