APTM10AM05FT

APTM10AM05FT Phase leg MOSFET Power Module VBUS Q1 NTC2 VDSS = 100V RDSon = 4.5mΩ typ @ Tj = 25°C ID = 278A @ Tc = 25°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS V® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile G1 S1 OUT Q2 G2 S2 0/VBU S NTC1 G2 S2 OUT VBUS 0/VBUS OUT S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTM10AM05FT– Rev 0 May, 2005 Tc = 25°C Max ratings 100 278 207 1100 ±30 5 780 100 50 3000 Unit V A V mΩ W A APTM10AM05FT All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V Min Tj = 25°C Tj = 125°C Typ VGS = 10V, ID = 125A VGS = VDS, ID = 5 mA VGS = ±30 V, VDS = 0 V 4.5 2 Max 200 1000 5 4 ±200 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 50V ID = 250A Resistive Switching VGS = 15V VBus = 66V ID = 250A R G = 2.5 Ω Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 250A, R G =2.5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 250A, R G = 2.5Ω Min Typ 20 8 2.9 700 120 360 80 165 280 135 1.1 1.2 1.22 1.28 Max Unit nF nC ns mJ mJ Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions Min Typ Tc = 25°C Tc = 80°C VGS = 0 V, IS = - 250A IS = - 250A VR = 50V diS/dt = 200A/µs IS = - 250A VR = 50V diS/dt = 200A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 0.8 3.4 Max 278 207 1.3 5 190 370 Unit A V V/ns ns µC APTM10AM05FT– Rev 0 May, 2005 Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 278A di/dt ≤ 200A/µs VR ≤ VDSS Tj ≤ 150°C APT website – http://www.advancedpower.com 2-6 APTM10AM05FT Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 300 250 200 150 100 50 0 1.1 V GS=10V 1 0.9 0.8 0 25 50 75 100 125 150 175 200 ID, Drain Current (A) VGS=20V 25 50 75 100 125 150 TC, Case Temperature (°C) APTM10AM05FT– Rev 0 May, 2005 APT website – http://www.advancedpower.com 4-6 APTM10AM05FT RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 1000 limited by RDSon VGS=10V ID= 125A 100µs 100 1ms Single pulse TJ=150°C 10 1 10ms 10 100 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 200 400 600 800 1000 Gate Charge (nC) VDS=50V V DS =80V ID=250A TJ=25°C V DS =20V Ciss 10000 Coss Crss 1000 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) APT website – http://www.advancedpower.com 5-6 APTM10AM05FT– Rev 0 May, 2005 APTM10AM05FT Delay Times vs Current 350 300 t d(on) and td(off) (ns) VDS=66V RG=2.5Ω T J=125°C L=100µH Rise and Fall times vs Current 250 200 t r and tf (ns) VDS=66V RG=2.5Ω TJ=125°C L=100µH tr 250 200 150 100 50 0 0 td(off) 150 100 50 0 tf td(on) 100 200 300 I D, Drain Current (A) Switching Energy vs Current 400 0 100 200 300 ID, Drain Current (A) 400 Switching Energy vs Gate Resistance 5 Switching Energy (mJ) V DS =66V ID=200A T J=125°C L=100µH 3 2.5 Eon and Eoff ( mJ) 2 1.5 1 0.5 0 0 100 200 300 400 I D, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 100 80 60 40 20 0 50 100 150 200 250 I D, Drain Current (A) VDS=66V D=50% RG=2.5Ω T J=125°C T C=75°C Hard switching ZCS VDS=66V RG=2.5Ω TJ=125°C L=100µH Eoff 4 3 2 1 0 0 Eoff Eon Eon 5 10 15 20 25 30 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 TJ=150°C Frequency (kHz) 100 TJ=25°C ZVS 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6-6 APTM10AM05FT– Rev 0 May, 2005