APTM10HM19FT3

APTM10HM19FT3 Full - Bridge MOSFET Power Module 13 14 Q1 Q3 VDSS = 100V RDSon = 19mΩ typ @ Tj = 25°C ID = 70A @ Tc = 25°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS V® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability 18 22 19 Q2 23 8 Q4 7 11 10 26 4 3 29 15 30 31 R1 32 16 27 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTM10HM19FT3– Rev 0 Max ratings 100 70 50 300 ±30 20 208 75 30 1500 Unit V A V mΩ W A May, 2005 APTM10HM19FT3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V Typ Tj = 25°C Tj = 125°C 19 2 VGS = 10V, ID = 35A VGS = VDS, ID = 1 mA VGS = ±30 V, VDS = 0 V Max 250 1000 20 4 ±100 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 70A Inductive switching @ 125°C VGS = 15V VBus = 66V ID = 70A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 70A, R G = 5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 70A, R G = 5 Ω Min Typ 5100 1900 800 200 40 92 35 70 95 125 276 302 304 320 Max Unit pF nC ns µJ µJ Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C Min Typ VGS = 0 V, IS = - 70A IS = -70A diS/dt = 100A/µs IS = -70A diS/dt = 100A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 0.5 1 Max 70 50 1.3 5 200 350 Unit A V V/ns ns µC May, 2005 2-6 APTM10HM19FT3– Rev 0 Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 70A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C APT website – http://www.advancedpower.com APTM10HM19FT3 Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 100 75 50 7V 100 50 0 0 4 8 12 16 20 24 6V T J=25°C 25 0 T J=125°C T J=-55°C 28 0 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.6 ID, DC Drain Current (A) Normalized to V GS=10V @ 35A 1 2 3 4 5 6 7 VGS , Gate to Source Voltage (V) 8 DC Drain Current vs Case Temperature 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 May, 2005 4-6 APTM10HM19FT3– Rev 0 RDS(on) Drain to Source ON Resistance 1.4 VGS=10V 1.2 1 0.8 0 50 100 150 200 250 ID, Drain Current (A) VGS=20V TC, Case Temperature (°C) APT website – http://www.advancedpower.com APTM10HM19FT3 RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 1000 limited by RDSon VGS=10V ID= 35A 1ms 100 10ms 10 Single pulse TJ=150°C 1 1 10 100 VDS, Drain to Source Voltage (V) 100ms VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 40 80 120 160 200 240 280 Gate Charge (nC) May, 2005 ID=70A T J=25°C VDS=20V VDS=50V V DS =80V 10000 Ciss Coss 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) APT website – http://www.advancedpower.com 5-6 APTM10HM19FT3– Rev 0 APTM10HM19FT3 Delay Times vs Current 120 100 td(on) a nd td(off) (ns) 80 60 40 20 0 0 20 40 60 80 100 ID, Drain Current (A) 120 VDS=66V RG=5Ω TJ=125°C L=100µH Rise and Fall times vs Current 160 140 tr a nd tf (ns) 120 100 80 60 40 20 0 0 20 40 60 80 100 ID, Drain Current (A) 120 VDS=66V R G=5Ω TJ =125°C L=100µH td(off) tf tr td(on) Switching Energy vs Current 0.75 Eoff Switching Energy (mJ) VDS=66V RG=5Ω TJ =125°C L=100µH S witching Energy vs Gate Resistance 1.5 VDS=66V ID=70A TJ=125°C L=100µH Eon and Eoff (mJ) 0.5 1 Eoff E on 0.25 0.5 Eon 0 0 20 40 60 80 100 120 I D, Drain Current (A) Operating Frequency vs Drain Current VDS=66V D=50% R G=5Ω TJ =125°C TC =75°C 0 0 10 20 30 40 50 60 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 1000 300 250 Frequency (kHz) 200 150 100 50 0 13 25 38 50 63 75 I D, Drain Current (A) Hard switching ZCS 100 TJ=150°C T J=25°C ZVS 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6-6 APTM10HM19FT3– Rev 0 May, 2005