APTM10SKM02

APTM10SKM02 Buck chopper MOSFET Power Module VBUS Q1 VDSS = 100V RDSon = 2.25mΩ typ @ Tj = 25°C ID = 495A @ Tc = 25°C Applicatio n • • AC and DC motor control Switched Mode Power Supplies G1 OUT S1 CR2 Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration 0/VBUS • • • G1 S1 VBUS 0/VBUS O UT Benefits • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTM10SKM02– Rev 0 May, 2005 Max ratings 100 495 370 1900 ±30 2.5 1250 100 50 3000 Unit V A V mΩ W A APTM10SKM02 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V Min Tj = 25°C Tj = 125°C Typ VGS = 10V, ID = 200A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0 V 2.25 2 Max 400 2000 2.5 4 ±400 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 50V ID = 400A Inductive switching VGS = 15V VBus = 66V ID = 400A R G = 1.25Ω Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 400A, R G =1.25 Ω Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 400A, R G = 1.25Ω Min Typ 40 15.7 5.9 1360 240 720 160 240 500 160 2.2 2.41 2.43 2.56 Max Unit nF nC ns mJ mJ Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. Chopper diode ratings and characteristics Symbol Characteristic VRRM IRM IF(A V) VF trr Qrr Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C Min 200 Typ Max 750 1000 Unit V µA A V ns nC APTM10SKM02– Rev 0 May, 2005 Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VR=200V 50% duty cycle IF = 400A IF = 800A IF = 400A IF = 400A VR = 133V di/dt =800A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 400 1 1.4 0.9 60 110 800 3360 APT website – http://www.advancedpower.com 2-6 APTM10SKM02 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 Transistor Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.1 0.14 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I Isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 400 320 240 160 80 0 8V 1000 7V 500 0 0 4 8 12 16 20 6V T J=25°C T J=125°C T J=-55°C 24 28 0 VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A) Normalized to V GS=10V @ 200A 1 2 3 4 5 6 VGS , Gate to Source Voltage (V) 7 RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 500 400 300 200 100 0 1.1 VGS =10V 1 0.9 0.8 0 100 200 300 400 500 ID, Drain Current (A) VGS=20V 25 50 75 100 125 150 TC, Case Temperature (°C) APTM10SKM02– Rev 0 May, 2005 APT website – http://www.advancedpower.com 4-6 APTM10SKM02 RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 Ciss ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS=10V ID= 200A 10000 limited by RDSon 1000 100µs 1ms 10ms 100 10 Single pulse TJ=150°C 1 10 100 VDS , Drain to Source Voltage (V) 1 VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 400 800 1200 1600 2000 Gate Charge (nC) VDS=50V V DS =80V ID=400A TJ=25°C V DS =20V C, Capacitance (pF) Coss 10000 Crss 1000 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) APT website – http://www.advancedpower.com 5-6 APTM10SKM02– Rev 0 May, 2005 APTM10SKM02 Delay Times vs Current 600 500 t d(on) and td(off) (ns) t r and tf (ns) 400 300 200 100 0 50 150 250 350 450 550 I D, Drain Current (A) 650 VDS=66V RG=1.25Ω T J=125°C L=100µH Rise and Fall times vs Current 300 250 tr t d(off) 200 150 100 50 0 50 150 250 350 450 550 ID, Drain Current (A) 650 tf VDS=66V RG=1.25Ω T J=125°C L=100µH td(on) Switching Energy vs Current 5 Switching Energy (mJ) 4 3 2 1 0 50 150 250 350 450 550 650 I D, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 60 50 Frequency (kHz) ZCS VDS=66V RG=1.25Ω TJ=125°C L=100µH Switching Energy vs Gate Resistance 9 8 7 6 5 4 3 2 1 0 2.5 5 7.5 10 12.5 15 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 TJ=150°C V DS =66V ID=400A T J=125°C L=100µH Eoff Eon Eon and Eoff ( mJ) Eoff Eon 40 30 20 10 0 100 VDS=66V D=50% RG=1.25Ω T J=125°C T C=75°C ZVS 100 TJ=25°C Hard switching 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) 200 300 400 500 ID, Drain Current (A) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6-6 APTM10SKM02– Rev 0 May, 2005