APTM10TAM19FP

APTM10TAM19FP Triple phase leg MOSFET Power Module VBUS1 VBUS2 VBUS3 VDSS = 100V RDSon = 19mΩ max @ Tj = 25°C ID = 70A @ Tc = 25°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control G1 G3 G5 S1 U S3 V S5 W G2 G4 G6 S2 0/VBUS1 S4 0/VBUS2 S6 0/VBUS3 Features • Power MOS V® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Very low (12mm) profile • Each leg can be easily paralleled to achieve a phase leg of three times the current capability • Module can be configured as a three phase bridge • Module can be configured as a boost followed by a full bridge Max ratings 100 70 50 220 ±30 19 208 75 50 1500 Unit V September, 2004 1–6 APTM10TAM19FP – Rev 0 VBUS 1 VBUS 2 VBUS 3 G1 0/VBUS 1 S1 S2 G2 0/VBUS 2 G3 S3 S4 G4 0/VBUS 3 G5 S5 S6 G6 U V W Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C A V mΩ W A mJ Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com APTM10TAM19FP All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol B VDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0 V, ID = 250µA Min 100 VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V Typ Max 250 1000 19 4 ±100 Unit V µA mΩ V nA Tj = 25°C Tj = 125°C 2 VGS = 10V, ID = 35A VGS = VDS, ID = 1 mA VGS = ±30 V, VDS = 0 V Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 50V ID =70A Inductive switching @ 125°C VGS = 15V VBus = 66V ID = 70A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 70A, R G = 5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 70A, R G = 5 Ω Min Typ 5100 1900 800 200 40 92 35 70 95 125 276 302 304 320 Max Unit pF nC ns µJ µJ Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions Min Typ Tc = 25°C Tc = 80°C VGS = 0 V, IS = - 139A IS = - 70A VR = 66V diS/dt = 100A/µs IS = - 70A VR = 66V diS/dt = 100A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 0.5 1 Max 70 50 1.3 5 200 350 Unit A V V/ns ns µC September, 2004 2–6 APTM10TAM19FP – Rev 0 Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 70A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C APT website – http://www.advancedpower.com APTM10TAM19FP Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case IGBT 2500 -40 -40 -40 3 RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 100 75 50 7V 100 6V T J=25°C 50 0 0 4 8 12 16 20 24 28 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.6 25 0 0 T J=125°C T J=-55°C 1 2 3 4 5 6 7 VGS , Gate to Source Voltage (V) 8 DC Drain Current vs Case Temperature 80 ID, DC Drain Current (A) 250 70 60 50 40 30 20 10 0 25 50 75 100 125 150 RDS(on) Drain to Source ON Resistance Normalized to V GS=10V @ 35A 1.4 VGS=10V 1.2 1 0.8 0 50 100 150 200 ID, Drain Current (A) VGS=20V TC, Case Temperature (°C) APT website – http://www.advancedpower.com 4–6 APTM10TAM19FP – Rev 0 September, 2004 APTM10TAM19FP RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 1000 limited by RDSon VGS=10V ID= 70A 1ms 100 10ms 10 Single pulse TJ=150°C 1 1 10 100 VDS, Drain to Source Voltage (V) 100ms VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 40 80 120 160 200 240 280 September, 2004 5–6 APTM10TAM19FP – Rev 0 ID=70A T J=25°C VDS=20V VDS=50V V DS =80V 10000 Ciss Coss 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) Gate Charge (nC) APT website – http://www.advancedpower.com APTM10TAM19FP Delay Times vs Current 120 100 t d(on) and td(off) (ns) 80 60 40 20 0 0 20 40 60 80 100 I D, Drain Current (A) 120 VDS=66V RG=5Ω T J=125°C L=100µH Rise and Fall times vs Current 160 140 t r and tf (ns) 120 100 80 60 40 20 0 0 20 40 60 80 100 ID, Drain Current (A) 120 V DS=66V R G=5Ω T J=125°C L=100µH t d(off) tf tr td(on) Switching Energy vs Current 0.75 Eoff Switching Energy (mJ) V DS =66V RG =5Ω T J=125°C L=100µH Switching Energy vs Gate Resistance 1.5 VDS=66V ID=70A T J=125°C L=100µH Eon and Eoff ( mJ) 0.5 1 Eoff Eon 0.25 0.5 Eon 0 0 20 40 60 80 100 120 I D, Drain Current (A) O perating Frequency vs Drain Current VDS=66V D=50% RG=5Ω TJ=125°C TC=75°C 0 0 10 20 30 40 50 60 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 1000 300 250 Frequency (kHz) 200 150 100 50 0 13 25 38 50 63 75 I D, Drain Current (A) Hard switching ZCS 100 TJ=150°C TJ=25°C ZVS 10 1 VSD, Source to Drain Voltage (V) September, 2004 6–6 APTM10TAM19FP – Rev 0 0.3 0.5 0.7 0.9 1.1 1.3 1.5 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com