APTM10UM01FA

APTM10UM01FA Single Switch MOSFET Power Module SK S D VDSS = 100V RDSon = 1.5mΩ typ @ Tj = 25°C ID = 860A* @ Tc = 25°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS V® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Fast intrinsic diode - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile G DK DK S D SK G Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ * Specification of MOSFET device but output current must be limited to 500A to not exceed a delta of temperature greater than 100°C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTM10UM01FA– Rev 0 May, 2005 Max ratings 100 860 * 640 * 2200 ±30 1.6 2500 100 50 3000 Unit V A V mΩ W A APTM10UM01FA All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V Min Tj = 25°C Tj = 125°C Typ VGS = 10V, ID = 275A VGS = VDS, ID = 12mA VGS = ±30 V, VDS = 0 V 1.5 2 Max 500 2000 1.6 4 ±450 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 50V ID =550A Inductive switching VGS = 15V VBus = 66V ID = 550A R G = 1Ω Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 550A, R G =1 Ω Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 550A, R G = 1Ω Min Typ 60 3.7 5.9 2100 360 1080 185 270 600 175 3.3 3.6 3.65 3.85 Max Unit nF nC ns mJ mJ Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions Min Typ Tc = 25°C Tc = 80°C VGS = 0 V, IS = - 550A IS = - 550A VR = 66V diS/dt = 600A/µs IS = - 550A VR = 66V diS/dt = 600A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 2.4 10.2 Max 860* 640* 1.3 5 190 370 Unit A V V/ns ns µC APTM10UM01FA– Rev 0 May, 2005 Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 860A di/dt ≤ 600A/µs VR ≤ VDSS Tj ≤ 150°C APT website – http://www.advancedpower.com 2-6 APTM10UM01FA Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I Isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 600 480 360 240 120 0 8V 7V 6V T J=25°C T J=125°C T J=-55°C 0 4 8 12 16 20 24 28 0 VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current 1.1 VGS =10V 1 2 3 4 5 6 VGS , Gate to Source Voltage (V) 7 RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 1000 ID, DC Drain Current (A) 800 600 400 200 0 Normalized to V GS=10V @ 275A 1 0.9 VGS=20V 0.8 0 100 200 300 400 500 600 700 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) APTM10UM01FA– Rev 0 May, 2005 APT website – http://www.advancedpower.com 4-6 APTM10UM01FA RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 1000000 C, Capacitance (pF) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 10000 limited by RDSon VGS=10V ID= 275A 1000 100µs 1ms 100 10ms 10 Single pulse TJ=150°C 1 10 100 VDS , Drain to Source Voltage (V) 1 VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 500 1000 1500 2000 2500 3000 Gate Charge (nC) VDS=50V V DS =80V ID=550A TJ=25°C V DS =20V 100000 Ciss Coss 10000 Crss 1000 0 10 20 30 40 50 VDS , Drain to Source Voltage (V) APT website – http://www.advancedpower.com 5-6 APTM10UM01FA– Rev 0 May, 2005 APTM10UM01FA Delay Times vs Current 700 600 t d(on) and td(off) (ns) VDS=66V RG=1Ω T J=125°C L=100µH Rise and Fall times vs Current 350 300 t r and tf (ns) 500 400 300 200 100 t d(off) 250 200 150 100 50 tr tf VDS=66V RG=1Ω T J=125°C L=100µH td(on) 0 100 300 500 700 I D, Drain Current (A) Switching Energy vs Current 900 0 100 300 500 700 ID, Drain Current (A) 900 Switching Energy vs Gate Resistance 12 V DS=66V ID=550A T J=125°C L=100µH 8 Eoff Switching Energy (mJ) 6 4 2 0 100 200 300 400 500 600 700 800 900 I D, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 50 40 ZCS VDS=66V RG=1Ω TJ=125°C L=100µH 10 8 6 4 2 0 Eoff Eon and Eoff ( mJ) Eon Eon 2 4 6 8 10 12 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 10000 1000 100 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) Frequency (kHz) T J=150°C T J=25°C 30 20 10 0 200 VDS=66V D=50% RG=1Ω T J=125°C T C=75°C ZVS Hard switching 300 400 500 600 700 800 ID, Drain Current (A) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6-6 APTM10UM01FA– Rev 0 May, 2005