APTM120A15F

APTM120A15F Phase leg MOSFET Power Module VBUS Q1 VDSS = 1200V RDSon = 150mΩ max @ Tj = 25°C ID = 60A @ Tc = 25°C Applicatio n • • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control G1 OUT S1 Q2 Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration G2 S2 0/VBUS • • • G1 S1 VBUS 0/VBUS OUT Benefits • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile S2 G2 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM120A15F– Rev 0 Max ratings 1200 60 45 240 ±30 150 1250 22 50 3000 Unit V A V mΩ W A mJ July, 2004 APTM120A15F All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol B VDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0 V, ID = 1 mA Min 1200 VGS = 0V,VDS = 1200V VGS = 0V,VDS = 1000V T j = 25°C T j = 125°C Typ Max 400 2000 150 5 ±250 Unit V µA mΩ V nA VGS = 10V, ID = 30A VGS = VDS, ID = 10mA VGS = ±30V, VDS = 0 V 3 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 60A Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 60A R G = 1.2Ω Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 60A, R G = 1.2 Ω Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 60A, R G = 1.2 Ω Min Typ 20.6 3.08 0.52 748 96 480 20 15 160 45 3.96 2.74 6.26 3.43 Max Unit nF nC ns mJ mJ Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C Min Typ VGS = 0 V, IS = - 60A IS = - 60A VR = 600V diS/dt = 400A/µs IS = - 60A VR = 600V diS/dt = 400A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 8 28 Max 60 45 1.3 18 320 650 Unit A V V/ns ns µC July, 2004 2–6 APTM120A15F– Rev 0 Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 60A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C APT website – http://www.advancedpower.com APTM120A15F Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle I D, Drain Current (A) 160 120 80 40 0 0 5 10 15 20 7V 6.5V 240 200 160 120 80 40 0 TJ=25°C TJ=125°C 0 1 2 3 4 5 6 TJ=-55°C 7 8 9 6V 5.5V 5V 25 30 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A) Normalized to VGS =10V @ 30A VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 70 60 50 40 30 20 10 0 25 50 75 100 125 150 RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 VGS=10V VGS=20V 40 80 120 160 ID, Drain Current (A) TC, Case Temperature (°C) July, 2004 APT website – http://www.advancedpower.com 4–6 APTM120A15F– Rev 0 APTM120A15F RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 Ciss C, Capacitance (pF) 10000 Coss 14 12 10 8 6 4 2 0 0 160 320 480 640 800 960 Gate Charge (nC) I D=60A TJ=25°C V DS=240V VDS=600V V DS =960V ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS =10V ID=30A 1000 100µs 100 limited by RDS on 1ms 10 Single pulse TJ =150°C 1 1 10ms 1200 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) APT website – http://www.advancedpower.com 5–6 APTM120A15F– Rev 0 July, 2004 APTM120A15F Delay Times vs Current 180 td(on) and td(off) (ns) 150 60 V DS=800V RG=1.2Ω T J=125°C L=100µH Rise and Fall times vs Current 80 VDS=800V RG=1.2Ω T J=125°C L=100µH t d(off) tf 90 60 30 0 20 tr and tf (ns) 120 40 tr 20 t d(on) 0 40 60 80 100 120 140 20 40 I D, Drain Current (A) Switching Energy vs Current 60 80 100 120 I D, Drain Current (A) 140 Switching Energy vs Gate Resistance 12 Switching Energy (mJ) 10 8 6 4 2 0 20 40 60 80 100 120 140 ID, Drain Current (A) Operating Frequency vs Drain Current 14 Switching Energy (mJ) VDS=800V RG=1.2Ω TJ=125°C L=100µH Eon 12 10 8 6 4 V DS=800V ID=60A T J=125°C L=100µH Eoff Eoff Eon 2 0.00 1.25 2.50 3.75 5.00 6.25 7.50 8.75 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 200 Frequency (kHz) 150 100 50 0 5 15 25 35 45 ID, Drain Current (A) 55 V DS=800V D=50% R G=1.2Ω T J=125°C T C=75°C ZCS ZVS IDR, Reverse Drain Current (A) 250 1000 100 TJ=150°C TJ=25°C 10 Hard switching 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM120A15F– Rev 0 July, 2004