APTM20DUM05

APTM20DUM05 Dual common source MOSFET Power Module VDSS = 200V RDSon = 5mW max @ Tj = 25°C ID = 317A @ Tc = 25°C Application · AC Switches · Switched Mode Power Supplies · Uninterruptible Power Supplies Features · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged · Kelvin source for easy drive · Very low stray inductance - Symmetrical design - M5 power connectors · High level of integration Benefits · Outstanding performance at high frequency operation · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Low profile G1 S1 D1 S D2 S2 G2 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 200 317 237 1268 ±30 5 1136 89 50 2500 Unit V A V mW W A mJ Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM20DUM05 – Rev 2 May, 2004 APTM20DUM05 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 500µA VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Tj = 25°C Tj = 125°C Min 200 Typ Max 200 1000 5 5 ±200 Unit V µA mW V nA VGS = 10V, ID = 158.5A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V 3 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 300A Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 300A RG = 1.2W Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 300A, RG = 1.2Ω Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 300A, RG = 1.2Ω Min Typ 27.4 8.72 0.38 448 172 188 28 56 81 99 1852 1820 2432 2124 µJ µJ ns Max Unit nF nC Source - Drain diode ratings and characteristics Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery w trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C VGS = 0V, IS = - 300A IS = -300A, VR = 100V diS/dt = 400A/µs 284 12.24 Min Typ Max 317 237 1.3 5 Unit A V V/ns ns µC May, 2004 2–6 APTM20DUM05 – Rev 2 u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. w dv/dt numbers reflect the limitations of the circuit rather than the device itself. VR £ VDSS Tj £ 150°C IS £ - 300A di/dt £ 700A/µs APT website – http://www.advancedpower.com APTM20DUM05 Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle ID, Drain Current (A) 800 600 400 200 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 1.15 1.1 VGS=10V 600 7.5V 7V 6.5V 6V 5.5V 400 TJ=25°C TJ=125°C T J=-55°C 200 0 2 3 4 5 6 7 8 9 VGS, Gate to Source Voltage (V) RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 320 ID, DC Drain Current (A) 280 240 200 160 120 80 40 0 25 50 75 100 125 TC, Case Temperature (°C) 150 May, 2004 Normalized to VGS=10V @ 158.5A 1.05 1 0.95 0.9 0 100 200 300 ID, Drain Current (A) 400 VGS=20V APT website – http://www.advancedpower.com 4–6 APTM20DUM05 – Rev 2 APTM20DUM05 RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss ID, Drain Current (A) 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area ON resistance vs Temperature VGS=10V ID= 158.5A 10000 1000 limited by RDSon 100µs 1ms 10ms 100 10 Single pulse TJ=150°C 1 1 DC line 10 100 1000 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 12 VDS=40V ID=300A 10 TJ=25°C V =100V DS 8 6 4 2 0 0 100 200 300 VDS=160V 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 400 500 Gate Charge (nC) May, 2004 APT website – http://www.advancedpower.com 5–6 APTM20DUM05 – Rev 2 APTM20DUM05 Delay Times vs Current 90 80 td(on) and td(off) (ns) 70 60 50 40 30 20 10 50 150 250 350 450 550 ID, Drain Current (A) Switching Energy vs Current 5 4 3 2 1 0 50 150 250 350 450 550 ID, Drain Current (A) Operating Frequency vs Drain Current 300 Frequency (kHz) 250 200 150 100 50 0 30 70 110 150 190 230 ID, Drain Current (A) 270 VDS=133V D=50% RG=1.2Ω TJ=125°C VDS=133V RG=1.2Ω TJ=125°C L=100µH Rise and Fall times vs Current 160 140 td(off) tr and tf (ns) 120 100 80 60 40 20 0 50 VDS=133V RG=1.2Ω TJ=125°C L=100µH tf tr td(on) 150 250 350 450 550 ID, Drain Current (A) Switching Energy vs Gate Resistance 6 Switching Energy (mJ) 5.5 5 4.5 4 3.5 3 2.5 2 0 2.5 5 7.5 10 12.5 15 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 TJ=150°C 100 TJ=25°C VDS=133V ID=300A TJ=125°C L=100µH Eon and Eoff (mJ) VDS=133V RG=1.2Ω TJ=125°C L=100µH Eon Eoff Eoff Eon IDR, Reverse Drain Current (A) 350 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V) May, 2004 APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM20DUM05 – Rev 2 APT reserves the right to change, without notice, the specifications and information contained herein