APTM50AM24SC

APTM50AM24SC Phase leg Series & SiC parallel diodes VDSS = 500V RDSon = 24mΩ max @ Tj = 25°C ID = 150A @ Tc = 25°C Applicatio n • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration MOSFET Power Module • • G1 S1 VBUS 0/VBUS OUT • S2 G2 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–7 APTM50AM24SC – Rev 1 Max ratings 500 150 110 600 ±30 24 1250 24 30 1300 Unit V A V mΩ W A June, 2004 APTM50AM24SC All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic B VDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0 V, ID = 1.5mA Min 500 VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V T j = 25°C Tj = 125°C Typ Max 500 3 24 5 ±500 VGS = 10V, ID = 75A VGS = VDS, ID = 6 mA VGS = ±30 V, VDS = 0 V 3 Unit V µA mA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 150A Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 150A R G = 0.8Ω Min Typ 19.6 4.2 0.3 434 120 216 10 17 50 41 Max Unit nF nC ns SiC Parallel diode ratings and characteristics Symbol VRRM IRRM IF(A V) VF QC Q Characteristic Maximum Peak Repetitive Reverse Voltage Test Conditions VR=600V 50% duty cycle Min 600 Tj = 25°C Tj = 125°C Tc = 125°C Tj = 25°C Tj = 175°C Typ 400 800 80 1.6 2.0 112 520 400 Max 1600 8000 1.8 2.4 Unit V µA A V nC pF Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 80A IF = 80A, VR = 300V di/dt =2000A/µs f = 1 MHz, VR = 200V f = 1MHz, VR = 400V APT website – http://www.advancedpower.com 2–7 APTM50AM24SC – Rev 1 June, 2004 APTM50AM24SC Series diode ratings and characteristics Symbol Characteristic IF(A V) Maximum Average Forward Current VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/µs IF = 120A VR = 133V di/dt = 400A/µs Min Tc = 85°C Typ 120 1.1 1.4 0.9 31 60 120 500 Max 1.15 V Unit A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Transistor Series diode Parallel diode Min Typ Max 0.10 0.46 0.35 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle TJ =25°C TJ =125°C TJ=-55°C 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 160 RDS(on) Drain to Source ON Resistance 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0 VGS=10V 120 80 VGS=20V 40 0 60 120 180 240 300 360 25 ID, Drain Current (A) 50 75 100 125 TC, Case Temperature (°C) 150 June, 2004 4–7 APTM50AM24SC – Rev 1 APT website – http://www.advancedpower.com APTM50AM24SC RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 1000 ID, Drain Current (A) limited by R DSon ON resistance vs Temperature VGS=10V ID=75A 1.1 1.0 0.9 0.8 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS (TH), Threshold Voltage (Normalized) 100µs 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100 limited by RDSon 1ms 10 Single pulse TJ =150°C 1 1 10 100 1000 VDS, Drain to Source Voltage (V) 10ms 100000 Ciss C, Capacitance (pF) 10000 Coss VGS , Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 V DS=100V I D=150A 12 T =25°C J V =250V DS 10 8 6 4 2 0 0 100 200 300 400 Gate Charge (nC) 500 600 VDS=400V 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 APT website – http://www.advancedpower.com 5–7 APTM50AM24SC – Rev 1 June, 2004 APTM50AM24SC Delay Times vs Current 60 50 t d(on) and td(off) (ns) V DS =333V RG =0.8Ω T J=125°C L=100µH Rise and Fall times vs Current 80 VDS=333V RG=0.8Ω TJ=125°C L=100µH 30 20 10 0 30 t r and tf (ns) 40 td(off) 60 tf 40 td(on) 20 tr 0 80 130 180 230 ID, Drain Current (A) 280 30 80 130 180 230 280 I D, Drain Current (A) Switching Energy vs Gate Resistance 8 Switching Energy (mJ) 6 4 2 0 Eon VDS=333V ID=150A TJ=125°C L=100µH Switching Energy vs Current 5 Switching Energy (mJ) 4 3 2 1 0 30 80 130 180 230 280 ID, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 600 500 Frequency (kHz) 400 300 200 100 0 30 60 90 120 150 ID, Drain Current (A) VDS=333V D=50% RG=0.8Ω T J=125°C VDS=333V RG=0.8Ω T J=125°C L=100µH Eoff Eoff Eon 0 1 2 3 4 5 6 7 8 9 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage TJ =150°C 100 TJ=25°C 10 1000 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) June, 2004 APT website – http://www.advancedpower.com 6–7 APTM50AM24SC – Rev 1 APTM50AM24SC Typical SiC Diode Performance Curve M aximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 Thermal Impedance (°C/W) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.7 0.5 0.3 0.9 0 0.00001 Rectangular Pulse Duration (Seconds) Forward Characteristics Reverse Characteristics 160 I F Forward Current (A) TJ=25°C IR Reverse Current (µA) 1600 1400 1200 1000 800 600 400 200 0 200 300 400 500 600 700 VR Reverse Voltage (V) 800 TJ=25°C TJ =125°C TJ =75°C TJ =175°C 120 80 40 0 0 0.5 TJ =75°C TJ=175°C TJ =125°C 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) Capacitance vs.Reverse Voltage 3000 C, Capacitance (pF) 2500 2000 1500 1000 500 0 1 June, 2004 7–7 APTM50AM24SC – Rev 1 10 100 VR Reverse Voltage 1000 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com