APTM50DAM17

APTM50DAM17 Boost chopper MOSFET Power Module VDSS = 500V RDSon = 17mW max @ Tj = 25°C ID = 180A @ Tc = 25°C Application · · · AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration · · · VBUS 0/VBUS O UT Benefits · · · · Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile S2 G2 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 500 180 135 720 ±30 17 1250 51 50 3000 Unit V A V mW W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM50DAM17 – Rev 1 May, 2004 Tc = 25°C APTM50DAM17 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 500µA VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Min 500 Tj = 25°C Tj = 125°C Typ Max 200 1000 17 5 ±200 Unit V µA mW V nA VGS = 10V, ID = 90A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V 3 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 180A Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 180A RG = 0.5W Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 180A, RG = 0.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 180A, RG = 0.5Ω Min Typ 28 5.6 0.36 560 160 280 21 38 75 93 4140 3380 6224 4052 µJ µJ ns Max Unit nF nC Diode ratings and characteristics Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 180A IF = 360A IF = 180A IF = 180A VR = 400V di/dt = 600A/µs IF = 180A VR = 400V di/dt = 600A/µs Min Tc = 70°C Typ 180 1.6 1.9 1.4 130 170 660 2760 Max 1.8 V Unit A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. APT website – http://www.advancedpower.com 2–6 APTM50DAM17 – Rev 1 May, 2004 APTM50DAM17 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 Transistor Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.1 0.32 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 600 7V 400 6.5V 6V 5.5V 0 0 5V TJ=25°C 200 TJ=125°C TJ=-55°C 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current RDS(on) Drain to Source ON Resistance 1.1 160 140 120 100 80 60 40 20 0 25 50 75 100 125 TC, Case Temperature (°C) 150 1.05 VGS=10V 1 VGS=20V 0.95 0.9 0 50 100 150 200 ID, Drain Current (A) 250 APT website – http://www.advancedpower.com 4–6 APTM50DAM17 – Rev 1 May, 2004 APTM50DAM17 RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss 1000 ID, Drain Current (A) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area limited by RDSon VGS=10V ID=90A 100 us 100 1 ms 10 Single pulse TJ=150°C 1 1 10 100 1000 VDS, Drain to Source Voltage (V) 10 ms 100 ms Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 14 12 10 8 6 4 2 0 0 100 200 300 400 500 600 700 Gate Charge (nC) VDS=400V ID=180A TJ=25°C VDS=100V VDS=250V 1000 Crss 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) APT website – http://www.advancedpower.com 5–6 APTM50DAM17 – Rev 1 May, 2004 APTM50DAM17 Delay Times vs Current 80 70 td(on) and td(off) (ns) 60 50 40 30 20 10 40 80 120 160 200 240 280 ID, Drain Current (A) Switching Energy vs Current 12 Switching Energy (mJ) 10 8 6 4 2 0 40 80 120 160 200 240 ID, Drain Current (A) 280 Eon Switching Energy (mJ) VDS=333V RG=0.5Ω TJ=125°C L=100µH VDS=333V RG=0.5Ω TJ=125°C L=100µH Rise and Fall times vs Current 160 140 120 tr and tf (ns) 100 80 60 40 20 0 40 80 120 160 200 240 ID, Drain Current (A) 280 VDS=333V RG=0.5Ω TJ=125°C L=100µH td(off) tf tr td(on) Switching Energy vs Gate Resistance 20 16 12 8 4 0 0 2.5 5 7.5 10 12.5 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 TJ=150°C 100 TJ=25°C VDS=333V ID=180A TJ=125°C L=100µH Eoff Eon Eoff Operating Frequency vs Drain Current 400 Frequency (kHz) 350 300 250 200 150 100 50 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) VDS=333V D=50% RG=0.5Ω TJ=125°C IDR, Reverse Drain Current (A) 450 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM50DAM17 – Rev 1 May, 2004