APTM50DDA10T3
Dual Boost chopper MOSFET Power Module
13 14
VDSS = 500V RDSon = 100mΩ max @ Tj = 25°C ID = 37A @ Tc = 25°C
Applicatio n • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a single boost of twice the current capability
CR1 22 7
CR2
23 Q1 26
8 Q2 4
27 29 15 30 31 R1 32 16
3
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C
Tc = 25°C
V mΩ W A mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
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APTM50DDA10T3 – Rev1 December, 2004
Max ratings 500 37 28 140 ±30 100 312 41 50 1600
Unit V A
APTM50DDA10T3
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0 V VDS = 500V Min Tj = 25°C Tj = 125°C VGS = 10V, ID = 18.5A VGS = VDS, ID = 1 mA VGS = ±30 V, VDS = 0 V Typ Max 100 500 100 5 ±100 Unit µA mΩ V nA
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Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 37A Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 37A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 37A, R G = 5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 37A, R G = 5 Ω Test Conditions VR=600V
50% duty cycle
Min
Typ 4367 894 61 96 24 49 15 21 73 52 566 545 931 635
Max
Unit pF
nC
ns
µJ µJ
Diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF(A V) VF Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage
Min 600 Tj = 25°C Tj = 125°C Tc = 70°C
Typ
Max 250 750
Unit V µA A
IF = 30A IF = 60A IF = 30A IF = 30A VR = 400V di/dt=200A/µs
Tj = 150°C Tj = 25°C Tj = 100°C Tj = 25°C Tj = 100°C
30 2.2 2.7 1.5 74 74 123 288
2.7 V
Qrr
Reverse Recovery Charge
nC
Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1.
APT website – http://www.advancedpower.com
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APTM50DDA10T3 – Rev1 December, 2004
trr
Reverse Recovery Time
ns
APTM50DDA10T3
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 Min Typ Max 0.4 1.2 150 125 100 4.7 110 Unit °C/W V °C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle
T J=-55°C
0
1
2
3
4
5
6
7
8
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 40
RDS(on) Drain to Source ON Resistance
1.20 1.15 1.10 1.05
30 20
VGS =20V
1.00 0.95 0.90 0 20 40 60 80 ID, Drain Current (A)
10
0
APTM50DDA10T3 – Rev1 December, 2004
25
50 75 100 125 TC, Case Temperature (°C)
150
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APTM50DDA10T3
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS (TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 VGS , Gate to Source Voltage (V) 1000
100µs
2.5 2.0 1.5 1.0 0.5 0.0
ON resistance vs Temperature
VGS=10V ID=18.5A
-50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area
100
limited by Ry RDSon limited bDSon
1ms
10 Single pulse TJ =150°C 1 1 10 100 1000 VDS, Drain to Source Voltage (V)
10ms
Gate Charge vs Gate to Source Voltage 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 Gate Charge (nC)
VDS=400V ID=37A T J=25°C V DS =100V VDS=250V
C, Capacitance (pF)
10000
Ciss Coss
1000
100
Crss
10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50
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APTM50DDA10T3 – Rev1 December, 2004
APTM50DDA10T3
Delay Times vs Current 80 td(off)
VDS=333V RG=5Ω TJ=125°C L=100µH
Rise and Fall times vs Current 100 80 t r and tf (ns) 60 40 20 0 tr
VDS=333V RG=5Ω T J=125°C L=100µH
t d(on) and td(off) (ns)
60
tf
40
20
td(on)
0 10 20 30 40 50 60 ID, Drain Current (A) 70
10
20
30
40
50
60
70
I D, Drain Current (A) Switching Energy vs Gate Resistance
Switching Energy vs Current
2
Switching Energy (mJ)
2.5
Switching Energy (mJ)
1.6 1.2 0.8 0.4 0 10
VDS=333V RG=5Ω TJ=125°C L=100µH
Eon
2 1.5 1 0.5 0
V DS=333V ID=35A T J=125°C L=100µH
Eoff
Eoff
Eon
20
30
40
50
60
0
10
20
30
40
50
I D, Drain Current (A) Operating Frequency vs Drain Current 400 Frequency (kHz) 350 300 250 200 150 100 50 0 5 10 15 20 25 30 35 ID, Drain Current (A)
hard switching ZCS V DS=333V D=50% R G=5Ω T J=125°C T C=75°C ZVS
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
450
1000
100
TJ =150°C
10 TJ=25°C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
APTM50DDA10T3 – Rev1 December, 2004
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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