APTM50DUM38T

APTM50DUM38T Dual common source MOSFET Power Module VDSS = 500V RDSon = 38mW max @ Tj = 25°C ID = 90A @ Tc = 25°C Application · AC Switches · Switched Mode Power Supplies · Uninterruptible Power Supplies Q2 D1 Q1 D2 G1 G2 S1 S NTC1 S2 NTC2 Features · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged · Kelvin source for easy drive · Very low stray inductance - Symmetrical design - Lead frames for power connections · Internal thermistor for temperature monitoring · High level of integration Benefits · Outstanding performance at high frequency operation · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Solderable terminals both for power and signal for easy PCB mounting · Low profile G2 S2 D2 D1 S D2 S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 500 90 67 360 ±30 38 694 46 50 2500 Unit V A V mW W A mJ Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM50DUM38T – Rev 2 May, 2004 APTM50DUM38T All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 375µA VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Min 500 Tj = 25°C Tj = 125°C 3 Typ Max 150 750 38 5 ±150 Unit V µA mW V nA VGS = 10V, ID = 45A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 90A Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 90A RG = 2W Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 90A, RG = 2Ω Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 90A, RG = 2Ω Min Typ 11.2 2.4 0.18 246 66 130 18 35 87 77 1510 1452 2482 1692 µJ µJ ns Max Unit nF nC Source - Drain diode ratings and characteristics Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery w trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C VGS = 0V, IS = - 90A IS = - 90A, VR = 250V diS/dt = 200A/µs IS = - 90A, VR = 250V diS/dt = 200A/µs 680 14.2 Min Typ Max 90 67 1.3 8 Unit A V V/ns ns µC May, 2004 2–6 APTM50DUM38T – Rev 2 u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. w dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS £ - 90A di/dt £ 700A/µs VR £ VDSS Tj £ 150°C APT website – http://www.advancedpower.com APTM50DUM38T Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 8V 7.5V 7V 6.5V 6V 5.5V 200 150 100 50 TJ=25°C TJ=125°C TJ=-55°C 8 0 25 0 1 2 3 4 5 6 7 VGS, Gate to Source Voltage (V) RDS(on) Drain to Source ON Resistance 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0 VGS=10V DC Drain Current vs Case Temperature 100 80 60 40 20 0 VGS=20V 50 100 150 200 25 APT website – http://www.advancedpower.com 4–6 APTM50DUM38T – Rev 2 May, 2004 ID, Drain Current (A) 50 75 100 125 TC, Case Temperature (°C) 150 APTM50DUM38T RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss 1000 Crss 100 VGS, Gate to Source Voltage (V) 1000 limited by RDSon 2.5 2.0 1.5 1.0 0.5 0.0 ON resistance vs Temperature VGS=10V ID=45A -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 100 limited by RDSon 100µs 10 Single pulse TJ=150°C 1 1 1ms 10ms 100ms 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 VCE=100V ID=90A 12 T =25°C J V =250V CE 10 8 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC) May, 2004 VCE=400V 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 APT website – http://www.advancedpower.com 5–6 APTM50DUM38T – Rev 2 APTM50DUM38T Delay Times vs Current 100 80 60 40 20 0 20 40 60 80 100 120 140 ID, Drain Current (A) Switching Energy vs Current 5 Switching Energy (mJ) 4 3 2 1 0 20 40 60 80 100 120 140 ID, Drain Current (A) Operating Frequency vs Drain Current 350 Frequency (kHz) 300 250 200 150 100 50 0 20 30 40 50 60 70 80 ID, Drain Current (A) VDS=333V D=50% RG=2Ω TJ=125°C VDS=333V RG=2Ω TJ=125°C L=100µH Rise and Fall times vs Current td(off) 120 100 tr and tf (ns) VDS=333V RG=2Ω TJ=125°C L=100µH td(on) and td(off) (ns) tf 80 60 40 20 0 20 td(on) tr 40 60 80 100 120 140 ID, Drain Current (A) Switching Energy vs Gate Resistance 8 Switching Energy (mJ) 7 6 5 4 3 2 1 0 0 5 10 15 20 25 Eon VDS=333V ID=90A TJ=125°C L=100µH VDS=333V RG=2Ω TJ=125°C L=100µH Eon Eoff Eoff Gate Resistance (Ohms) Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 400 1000 100 TJ=150°C 10 TJ=25°C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) May, 2004 APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM50DUM38T – Rev 2 APT reserves the right to change, without notice, the specifications and information contained herein