APTM50H14FT3

APTM50H14FT3 Full - Bridge MOSFET Power Module 13 14 Q1 Q3 VDSS = 500V RDSon = 140mΩ max @ Tj = 25°C ID = 26A @ Tc = 25°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies 18 22 19 Q2 23 8 Q4 7 11 10 26 4 3 29 15 30 31 R1 32 16 27 Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTM50H14FT3 – Rev 0 September, 2004 Max ratings 500 26 18 105 ±30 140 208 35 30 1300 Unit V A APTM50H14FT3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol B VDSS IDSS RDS(on) VGS(th) IGSS Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0 V, ID = 250µA VGS = 0 V,VDS = 500V VGS = 10V, ID = 13A VGS = VDS, ID = 1 mA VGS = ±30 V, VDS = 0 V Min 500 Typ Max 100 140 5 ±100 Unit V µA mΩ V nA 3 Dynamic Characteristics Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 26A Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 26A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 26A, R G = 5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 26A, R G = 5 Ω Test Conditions Tc = 25°C Tc = 80°C VGS = 0 V, IS = - 26A IS = - 26A VR = 250V diS/dt = 100A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min Typ 3259 709 51 72 20 36 10 17 50 41 326 250 548 288 Max Unit pF nC ns µJ µJ Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Min Typ 26 18 Max Unit A 1.3 15 250 525 1.6 6 V V/ns ns µC APTM50H14FT3 – Rev 0 September, 2004 Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 26A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C APT website – http://www.advancedpower.com 2-6 APTM50H14FT3 Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle TJ =25°C TJ =125°C TJ =-55°C 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 30 RDS(on) Drain to Source ON Resistance 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0 VGS=10V 20 VGS=20V 10 0 10 20 30 40 50 60 25 ID, Drain Current (A) APTM50H14FT3 – Rev 0 September, 2004 50 75 100 125 TC, Case Temperature (°C) 150 APT website – http://www.advancedpower.com 4-6 APTM50H14FT3 RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 1000 ID, Drain Current (A) ON resistance vs Temperature VGS=10V ID=13A 1.1 1.0 0.9 0.8 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS (TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100 limited by Ry RDSon limited bDSon 100µs 10 Single pulse TJ =150°C 1 1 1ms 10ms 10 100 1000 VDS, Drain to Source Voltage (V) 100000 VGS , Gate to Source Voltage (V) C, Capacitance (pF) 10000 Gate Charge vs Gate to Source Voltage 14 V DS=100V I D=26A 12 T =25°C J V =250V DS Ciss Coss 10 8 6 4 2 0 0 20 40 60 Gate Charge (nC) 80 100 APTM50H14FT3 – Rev 0 September, 2004 VDS=400V 1000 100 Crss 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 APT website – http://www.advancedpower.com 5-6 APTM50H14FT3 Delay Times vs Current 60 50 t d(on) and td(off) (ns) VDS=333V RG=5Ω TJ=125°C L=100µH Rise and Fall times vs Current 80 VDS=333V RG=5Ω T J=125°C L=100µH 30 20 10 0 0 t r and tf (ns) 40 td(off) 60 tf 40 td(on) 20 tr 0 10 20 30 40 50 ID, Drain Current (A) 60 0 10 20 30 40 50 60 I D, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 1.2 Switching Energy (mJ) 2.5 Switching Energy (mJ) 1 0.8 0.6 0.4 0.2 0 0 VDS=333V RG=5Ω TJ=125°C L=100µH Eon 2 1.5 1 0.5 0 VDS=333V ID=26A T J=125°C L=100µH Eoff Eoff Eon 10 20 30 40 50 60 0 10 20 30 40 50 I D, Drain Current (A) Operating Frequency vs Drain Current V DS=333V D=50% R G=5Ω T J=125°C T C=75°C Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 500 Frequency (kHz) 400 300 200 100 0 5 10 15 Hard switching ZCS ZVS IDR, Reverse Drain Current (A) 600 1000 100 TJ =150°C 10 TJ=25°C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 APTM50H14FT3 – Rev 0 September, 2004 20 25 ID, Drain Current (A) VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6-6