APTM50HM75FT3

APTM50HM75FT3 Full - Bridge MOSFET Power Module 13 14 Q1 Q3 VDSS = 500V RDSon = 75mΩ max @ Tj = 25°C ID = 46A @ Tc = 25°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies 18 22 19 Q2 23 8 Q4 7 11 10 26 4 3 29 15 30 31 R1 32 16 27 Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM50HM75FT 3 – Rev 0 September, 2004 Max ratings 500 46 34 184 ±30 75 357 46 50 2500 Unit V A APTM50HM75FT3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol B VDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0 V, ID = 250µA Min 500 VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Typ Max 250 1000 75 5 ±100 Unit V µA mΩ V nA Tj = 25°C Tj = 125°C 3 VGS = 10V, ID = 23A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0 V Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 46A Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 46A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 46A, R G = 5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 46A, R G = 5Ω Min Typ 5600 1200 90 123 33 65 18 35 87 77 755 726 1241 846 Max Unit pF nC ns µJ µJ Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C Min Typ VGS = 0 V, IS = - 46A Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 233 499 1.9 5.7 Max 46 34 1.3 15 Unit A V V/ns ns µC APTM50HM75FT 3 – Rev 0 September, 2004 IS = - 46A VR = 250V diS/dt = 100A/µs Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 46A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C APT website – http://www.advancedpower.com 2–6 APTM50HM75FT3 Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle TJ =25°C TJ =125°C TJ=-55°C 25 0 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 50 40 30 20 10 0 RDS(on) Drain to Source ON Resistance 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0 VGS=10V VGS=20V ID, Drain Current (A) APT website – http://www.advancedpower.com 4–6 APTM50HM75FT 3 – Rev 0 September, 2004 20 40 60 80 100 25 50 75 100 125 TC, Case Temperature (°C) 150 APTM50HM75FT3 RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS (TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 VGS , Gate to Source Voltage (V) C, Capacitance (pF) Ciss Coss 1000 limited by R DSon 2.5 2.0 1.5 1.0 0.5 0.0 ON resistance vs Temperature VGS=10V ID=23A -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 100 limited by RDSon 100µs 10 1ms 10ms 1 Single pulse TJ =150°C 1 100ms 0.1 10 100 1000 VDS, Drain to Source Voltage (V) 10000 Gate Charge vs Gate to Source Voltage 14 V CE =100V I D=46A 12 T =25°C J V =250V CE 10 8 6 4 2 0 0 20 APTM50HM75FT 3 – Rev 0 September, 2004 VCE=400V 1000 100 Crss 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 40 60 80 100 120 140 160 Gate Charge (nC) APT website – http://www.advancedpower.com 5–6 APTM50HM75FT3 Delay Times vs Current 100 80 60 40 20 0 10 20 30 40 50 60 I D, Drain Current (A) 70 VDS=333V RG=5Ω TJ=125°C L=100µH Rise and Fall times vs Current 120 100 t r and tf (ns) 80 60 40 20 0 10 20 30 40 50 60 70 I D, Drain Current (A) Switching Energy vs Gate Resistance 4 Switching Energy (mJ) 3.5 3 2.5 2 1.5 1 0.5 0 0 10 20 30 40 50 Eon VDS=333V ID=46A T J=125°C L=100µH VDS=333V RG=5Ω T J=125°C L=100µH td(off) t d(on) and td(off) (ns) tf td(on) tr Switching Energy vs Current 2.5 Switching Energy (mJ) 2 1.5 1 0.5 0 10 20 30 40 50 60 70 I D, Drain Current (A) Operating Frequency vs Drain Current 350 Frequency (kHz) 300 250 200 150 100 50 0 10 15 20 25 30 35 40 ID, Drain Current (A) hard switching ZCS V DS=333V D=50% R G=5Ω T J=125°C T C=75°C VDS=333V RG=5Ω TJ=125°C L=100µH Eon Eoff Eoff Gate Resistance (Ohms) Source to Drain Diode Forward Voltage ZVS IDR, Reverse Drain Current (A) 400 1000 100 TJ =150°C 10 TJ=25°C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 APTM50HM75FT 3 – Rev 0 September, 2004 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6