APTM50HM75SCT

APTM50HM75SCT Full bridge Series & SiC parallel diodes VDSS = 500V RDSon = 75mW max @ Tj = 25°C ID = 46A @ Tc = 25°C Application · Motor control · Switched Mode Power Supplies · Uninterruptible Power Supplies Q3 MOSFET Power Module VBUS CR1A CR3A Q1 CR1B CR3B G1 S1 CR2A OUT1 OUT2 CR4A G3 S3 Features · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated · Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration Q2 CR2B CR4B Q4 G2 S2 NTC1 0/VBUS NTC2 G4 S4 · · · · G3 S3 G4 S4 OUT2 Benefits · · · · · Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Max ratings 500 46 34 184 ±30 75 357 46 50 2500 Unit V A V mW W A mJ May, 2004 1–7 APTM50HM75SCT – Rev 1 VBUS 0/VBUS OUT1 S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed APT website – http://www.advancedpower.com APTM50HM75SCT All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 250µA VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Tj = 25°C Tj = 125°C Min 500 Typ Max 100 500 75 5 ±100 Unit V µA mW V nA VGS = 10V, ID = 23A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V 3 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy u Turn-on Switching Energy Turn-off Switching Energy u Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 46A Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 46A RG = 5W Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 46A, RG = 5Ω Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 46A, RG = 5Ω Min Typ 5590 1180 85 123 33 65 18 35 87 77 453 726 745 846 µJ µJ ns Max Unit pF nC u In accordance with JEDEC standard JESD24-1. Series diode ratings and characteristics Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 30A IF = 60A IF = 30A IF = 30A VR = 133V di/dt = 200A/µs IF = 30A VR = 133V di/dt = 200A/µs Min Tc = 85°C Typ 30 1.1 1.4 0.9 24 48 33 150 Max 1.15 V May, 2004 2–7 APTM50HM75SCT – Rev 1 Unit A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC APT website – http://www.advancedpower.com APTM50HM75SCT Parallel diode ratings and characteristics Symbol Characteristic Maximum Average Forward Current IF(AV) VF QC Q Diode Forward Voltage Total Capacitive Charge Total Capacitance Test Conditions 50% duty cycle Min Tc = 125°C Tj = 25°C Tj = 175°C IF = 20A Typ 20 1.6 2.0 28 130 100 Max 1.8 2.4 Unit A V nC pF IF = 20A, VR = 300V di/dt =800A/µs f = 1MHz, VR = 200V f = 1MHz, VR = 400V Min Transistor Series diode 2500 -40 -40 -40 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Typ Max 0.35 1.2 1.5 150 125 100 4.7 160 Typ 68 4080 Max Unit °C/W Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, Isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle TJ=25°C TJ=125°C TJ=-55°C 25 0 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 50 40 30 20 10 0 RDS(on) Drain to Source ON Resistance 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0 VGS=10V VGS=20V 20 40 60 80 100 25 APT website – http://www.advancedpower.com 4–7 APTM50HM75SCT – Rev 1 May, 2004 ID, Drain Current (A) 50 75 100 125 TC, Case Temperature (°C) 150 APTM50HM75SCT RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 VGS, Gate to Source Voltage (V) C, Capacitance (pF) Ciss Coss 1000 limited by RDSon 2.5 2.0 1.5 1.0 0.5 0.0 ON resistance vs Temperature VGS=10V ID=23A -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 100 limited by RDSon 100µs 10 1ms 10ms Single pulse TJ=150°C 1 100ms 1 0.1 10 100 1000 VDS, Drain to Source Voltage (V) 10000 Gate Charge vs Gate to Source Voltage 14 VCE=100V ID=46A 12 T =25°C J V =250V CE 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 Gate Charge (nC) May, 2004 VCE=400V 1000 100 Crss 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 APT website – http://www.advancedpower.com 5–7 APTM50HM75SCT – Rev 1 APTM50HM75SCT Delay Times vs Current 100 80 60 40 20 0 10 20 30 40 50 60 70 ID, Drain Current (A) Switching Energy vs Current 2 Switching Energy (mJ) 1.6 1.2 0.8 0.4 0 10 20 30 40 50 60 70 ID, Drain Current (A) Operating Frequency vs Drain Current 350 Frequency (kHz) 300 250 200 150 100 50 0 10 15 20 25 30 35 40 ID, Drain Current (A) VDS=333V D=50% RG=5Ω TJ=125°C VDS=333V RG=5Ω TJ=125°C L=100µH Rise and Fall times vs Current 120 100 tr and tf (ns) 80 60 40 20 0 10 20 30 40 50 60 70 ID, Drain Current (A) Switching Energy vs Gate Resistance 4 Switching Energy (mJ) 3.5 3 2.5 2 1.5 1 0.5 0 0 10 20 30 40 50 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage Eon VDS=333V ID=46A TJ=125°C L=100µH VDS=333V RG=5Ω TJ=125°C L=100µH td(off) td(on) and td(off) (ns) tf td(on) tr VDS=333V RG=5Ω TJ=125°C L=100µH Eoff Eoff Eon IDR, Reverse Drain Current (A) 400 1000 100 TJ=150°C 10 TJ=25°C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) May, 2004 APT website – http://www.advancedpower.com 6–7 APTM50HM75SCT – Rev 1 APTM50HM75SCT Typical SiC Diode Performance Curve M aximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.6 Thermal Impedance (°C/W) 1.4 1.2 1 0.8 0.6 0.4 0.2 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.5 0.3 0.9 0.7 0 0.00001 Rectangular Pulse Duration (Seconds) Forward Characteristics Reverse Characteristics 400 IR Reverse Current (µA) 350 300 250 200 150 100 50 0 200 300 400 500 600 700 VR Reverse Voltage (V) 800 TJ=25°C TJ=125°C TJ=75°C TJ=175°C 40 IF Forward Current (A) 35 30 25 20 15 10 5 0 0 0.5 1 TJ=25°C TJ=75°C TJ=175°C TJ=125°C 1.5 2 2.5 3 3.5 VF Forward Voltage (V) Capacitance vs.Reverse Voltage 800 700 C, Capacitance (pF) 600 500 400 300 200 100 0 1 May, 2004 7–7 APTM50HM75SCT – Rev 1 10 100 VR Reverse Voltage 1000 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com