ARF1518

ARF1518 ARF1518 BeO 1525-100 D G RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE • Specified 250 Volt, 27.12 MHz Characteristics: • Output Power = 750 Watts. • Gain = 17dB (Class C) • Efficiency > 75% MAXIMUM RATINGS Symbol VDSS ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. S 250V 750W 40MHz The ARF1518 is an RF power transistor designed for very high power class C, D, and E applications in scientific, commercial, medical and industrial RF power generators and amplifiers up to 40MHz. • High Performance Power RF Package. • Very High Breakdown for Improved Ruggedness. • Low Thermal Resistance. • Nitride Passivated Die for Improved Reliability. All Ratings: TC = 25°C unless otherwise specified. ARF 1518 UNIT Volts Amps Volts Watts °C 1000 30 ±30 1500 -55 to 200 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(ON) IDSS IGSS g fs V isolation VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Voltage 1 MIN TYP MAX UNIT Volts 1000 .4 .6 100 1000 ±400 13 2500 3 5 17 (ID(ON) = 15A, VGS = 10V) Ohms µA nA mhos Volts Volts Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 15A) RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute) Gate Threshold Voltage (VDS = VGS, ID = 50mA) THERMAL CHARACTERISTICS Symbol RθJC RθCS Characteristic (per package unless otherwise noted) Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) MIN TYP MAX UNIT °C/W 8-2005 050-4934 Rev A 0.12 0.09 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 200V f = 1 MHz VGS = 15V VDD = 500V ID = 30A @ 25°C RG = 1.6 Ω MIN TYP MAX ARF1518 UNIT 5400 300 125 8 5 25 13 6500 400 160 pF ns FUNCTIONAL CHARACTERISTICS Symbol GPS η ψ Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1 Test Conditions f = 27.12 MHz VGS = 0V VDD = 250V MIN TYP MAX UNIT dB % 15 70 17 75 Pout = 750W No Degradation in Output Power 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%. APT Reserves the right to change, without notice, the specifications and information contained herein. Table 1 - Typical Class AB Large Signal Impedance -- ARF1501 F (MHz) 2.0 13.5 27 40 Zin (Ω) 10.6 -j 12.2 0.5 -j 2.7 0.22 -j 2.7 0.2 +j .12 ZOL (Ω) 31 -j 4.7 15.6 -j 16 6.2 -j 12.6 3.1 -j 9.4 Zin - Gate shunted with 25Ω IDQ = 100mA ZOL - Conjugate of optimum load for 750 Watts output at Vdd = 250V Thermal Considerations and Package Mounting: The rated 1350W power dissipation is only available when the package mounting surface is at 25°C and the junction temperature is 200°C. The thermal resistance between junctions and case mounting surface is 0.12°C/W. When installed, an additional thermal impedance of 0.1°C/W between the package base and the mounting surface is typical. Insure that the mounting surface is smooth and flat. Thermal joint compound must be used to reduce the effects of small surface irregularities. The heatsink should incorporate a copper heat spreader to obtain best results. Use 4-40 or M3 screws torqued to 1.2 Nm. 8-2005 .250 .466 D .150r .500 G S ARF1518 .250 BeO 1525-100 .750 1.000 1 .125d .500 2 3 1.250 1.500 .300 .200 .005 .040 HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and mounting surface is beryllium oxideBeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area These devices must never be thrown away with general industrial or domestic waste. 4 1 2 3 4 Drain Source Source Gate 050-4934 Rev A ARF1518 -- 13.56 MHz Test Circuit 250V C8 C10 Output L2 T1 DUT C1-C3 1nF X7R 100V smt C4 2x 8.2 nF 1kV COG C5 270pF x2 ATC 100C C7-C10 8.2 nF 1kv COG C11 390 + 27 pF ATC 100C L1 2uH - 22t #24 enam. .312" dia. L2 368 nH - 5t #12 .625" dia .5" l L3 500nH 2t on 850u .5" bead R1 2.2k 0.5W T1 10:1t transformer L3 C7 C9 L1 RF Input C4 C5 C6 C1 C2 C3 R1 Parts placement - Not to Scale. 13.56 MHz Test Amp ARF1518 BeO ARF1518 1525-100 T1 J2 J1 RF 12-04 050-4934 Rev A 8-2005