ARF448B

D G S TO-247 ARF448A ARF448B Common Source RF POWER MOSFETs N - CH AN NEL ENHANCEMENT MODE 150V 140W 65MHz The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. Specified 150 Volt, 40.68 MHz Characteristics: Low Cost Common Source RF Package. Very High Breakdown for Improved Ruggedness. Low Thermal Resistance. Nitride Passivated Die for Improved Reliability. ¥ ¥ ¥ Output Power = 140 Watts. Gain = 15dB (Class C) Efficiency = 75% MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD RqJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25° C Gate-Source Voltage Total Power Dissipation @ TC = 25° C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. All Ratings: TC = 25° C unless otherwise specified. ARF448A/448B UNIT Volts Amps Volts Watts ° C/W °C 450 450 15 ±30 230 0.55 -55 to 150 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 mA) 1 MIN TYP MAX UNIT Volts 450 3 25 250 ±100 5 2 8.5 5 VDS(ON) On State Drain Voltage IDSS IGSS gfs VGS(TH) (I D(ON) = 7.5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125° C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 7.5A) Gate Threshold Voltage (VDS = VGS, ID = 50mA) mA nA mhos 7-2003 050-4908 Rev C Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V MIN TYP ARF448A/448B MAX UNIT 1400 150 65 7 5 23 12 1700 200 100 15 10 40 25 ns pF VDS = 150V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25° C RG = 1.6W FUNCTIONAL CHARACTERISTICS Symbol GPS h y Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 20:1 Test Conditions f = 40.68 MHz VGS = 0V VDD = 150V Pout = 140W MIN TYP MAX UNIT dB % 13 70 15 75 No Degradation in Output Power 1 Pulse Test: Pulse width < 380 m Duty Cycle < 2% S, APT Reserves the right to change, without notice, the specifications and information contained herein. 30 25 20 GAIN (dB) 15 10 5 0 10 Class C VDD = 150V 3000 Ciss 1000 500 Pout = 250W CAPACITANCE (pf) Coss Crss 100 50 30 40 50 60 65 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 20 1 5 10 50 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 25 ID, DRAIN CURRENT (AMPERES) TJ = -55° C VDS> ID (ON) x RDS (ON)MAX. 250 mSEC. PULSE TEST @ < 0.5 % DUTY CYCLE 70 ID, DRAIN CURRENT (AMPERES) OPERATION HERE LIMITED BY RDS (ON) 10mS 100mS 20 10 5 1mS 15 10mS 1 .5 TC =+25° C TJ =+150° C SINGLE PULSE 100mS DC 10 5 050-4908 Rev B TJ = +125° C TJ = -55° C TJ = +25° C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics .1 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area 1.2 VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 1.1 1.0 0.9 0.8 0.7 ARF448A/448B ID, DRAIN CURRENT (AMPERES) 40 VGS=8, 10 & 15V 30 6.5V 20 6V 5.5V 5V 4.5V 0 1 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics 10 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (° C) Figure 5, Typical Threshold Voltage vs Temperature GPS, COMMON SOURCE AMPLIFIER GAIN (dB) 300 Class C VDD = 150V 17 Class C VDD = 150V POUT, POWER OUT (WATTS) 240 f = 40.68 MHz 16 f = 40.68 MHz 180 15 120 60 14 0 0 4 6 8 10 PIN, POWER IN (WATTS) Figure 7, Typical Power Out vs Power In 2 60 120 180 240 300 POUT, POWER OUT (WATTS) Figure 8, Typical Common Source Amplifier Gain vs Power Out 13 0 0.6 D=0.5 Z JC, THERMAL IMPEDANCE (° C/W) q 0.2 0.1 0.05 0.05 0.02 0.01 0.005 0.01 SINGLE PULSE Note: PDM t1 t2 Peak TJ = PDM x ZqJC + TC Duty Factor D = t1/t2 0.1 0.001 10-5 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10-4 10 Table 1 - Typical Class C Large Signal Input-O utput Impedance Freq. (MHz) 2.0 13.5 27.0 40.0 65.0 Z in ( W ) 20.90 - j 9.2 2.40 - j 6.8 0.57 - j 2.6 0.31 - j 0.5 0.44 + j 1.9 Z OL ( W ) 56.00 - j 06.0 37.00 - j 26.0 18.00 - j 25.0 9.90 - j 19.2 4.35 - j 11.4 7-2003 050-4908 Rev C Z in - gate shunted by 25W Z OL - conjugate of optimum load impedance for 250W at 150V ARF448A/448B 40.68 MHz Test Circuit Parts List C1 -- 1800pF 100V chip C2-C4 -- Arco 463 Mica Trimmer C5-C7 -- 1nF 500V COG chip L1 -- 1" #16 AWG into hairpin ~9.6nH L2 -- 6t #16 AWG .25" ID ~165nH L3 -- 10t #18 AWG .25" ID ~0.47µH L4 -- VK200-4B ferrite choke ~3µH R1 -- 25 Ohm 1/2W Carbon T1 -- 9:1 Broadband Transformer L4 + C6 L3 L2 C5 C4 RF Output C7 150V RF Input L1 T1 C1 C2 R1 DUT C3 40.48 MHz Test Circuit TO-247 Package Outline Top View 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC Dimensions in Millimeters and (Inches) NOTE: The ARF446 and ARF447 comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. Source 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Device ARF448A ARF448B Gate Drain Source Source Drain Gate 050-4908 Rev C 7-2003 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.