ARF450

Common Source Push-Pull Pair ARF450 ARF450 BeO 11405 RF POWER MOSFET • Specified 150 Volt, 81.36 MHz Characteristics: • Output Power = 500 Watts. • Gain = 13dB (Class C) • Efficiency = 75% MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device Dissipation @ TC = 25°C N - CHANNEL ENHANCEMENT MODE 150V 500W 120MHz The ARF450 is a matched pair of RF power transistors in a common source configuration. It is designed for push-pull or parallel operation in scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz. • High Performance Push-Pull RF Package. • Very High Breakdown for Improved Ruggedness. • Low Thermal Resistance. • Nitride Passivated Die for Improved Reliability. All Ratings: TC = 25°C unless otherwise specified. ARF450 UNIT Volts Amps Volts Watts °C 450 450 11 ±30 650 -55 to 200 300 Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS gfs gfs1 gfs2 Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Voltage 1 MIN TYP MAX UNIT Volts µA nA mhos 500 5 25 250 ±100 3 0.9 3 5.8 1.1 5 (ID(ON) = 5.5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 5.5A) Forward Transconductance Ratio (VDS = 25V, ID = 5.5A) Gate Threshold Voltage (VDS = VGS, ID = 50mA) Delta Gate Threshold Voltage (VDS = VGS, ID = 50mA) / VGS(TH) ∆VGS(TH) 0.1 Volts THERMAL CHARACTERISTICS Symbol RθJC RθCS Characteristic (per package unless otherwise noted) Junction to Case (per section) Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) MIN TYP MAX UNIT 050-4910 Rev C 12-2000 0.54 0.1 °C/W CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA: EUROPE: 405 S.W. Columbia Street Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382 - 8028 FAX: (541) 388 -0364 Chemin de Magret Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 DYNAMIC CHARACTERISTICS (per section) Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time (Push-Pull Configuration) ARF450 Test Conditions VGS = 0V MIN TYP MAX UNIT 980 87 25 5 3.0 15 3 1200 120 40 10 7 25 7 ns pF VDS = 150V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C RG = 1.6 Ω FUNCTIONAL CHARACTERISTICS Symbol GPS η ψ Characteristic Test Conditions f = 81.36 MHz VGS = 0V VDD = 150V Pout = 500W MIN TYP MAX UNIT dB % Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1 12 70 13 75 No Degradation in Output Power 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%. APT Reserves the right to change, without notice, the specifications and information contained herein. Per each transistor side unless otherwise specified. 30 25 20 GAIN (dB) Pout = 150W CAPACITANCE (pf) Class C VDD = 150V 3000 Ciss 1000 500 15 10 5 0 30 Coss 100 50 Crss 60 75 90 105 120 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 45 1 5 10 50 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 10 16 ID, DRAIN CURRENT (AMPERES) TJ = -55°C ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @