ARF460B

D G S TO-247 ARF460A ARF460B Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 150W 65MHz The ARF460A and ARF460B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been optimized for both linear and high efficiency classes of operation. • Specified 125 Volt, 40.68 MHz Characteristics: • Output Power = 150 Watts. • Gain = 13dB (Class AB) • Efficiency = 75% (Class C) MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD RθJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Junction to Case • Low Cost Common Source RF Package. • Low Vth thermal coefficient. • Low Thermal Resistance. • Optimized SOA for Superior Ruggedness. All Ratings: TC = 25°C unless otherwise specified. ARF460A/B UNIT Volts 500 500 14 ±30 250 0.50 -55 to 150 °C Amps Volts Watts °C/W Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS gfs VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Voltage 1 MIN TYP MAX UNIT Volts 500 4 25 µA (I D(ON) = 7A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 7A) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 250 ±100 3.3 3 5.5 8 5 nA mhos Volts 7-2003 050-5966 Rev D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 150V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C RG = 1.6Ω MIN TYP ARF460A/B MAX UNIT 1200 150 60 7 6 20 4.4 1400 300 100 pF ns FUNCTIONAL CHARACTERISTICS Symbol GPS η ψ Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1 Test Conditions f = 40.68 MHz VGS = 0V VDD = 125V MIN TYP MAX UNIT dB % 13 70 15 75 Pout = 150W No Degradation in Output Power 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 30 25 20 GAIN (dB) 5000 Class C VDD = 150V Pout = 150W CAPACITANCE (pf) Ciss 1000 500 Coss Crss 100 50 15 10 5 0 30 NOT UPDATED 60 75 90 105 120 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 45 10 .1 .5 1 5 10 50 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 16 ID, DRAIN CURRENT (AMPERES) TJ = -55°C VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @