ARF463AP1
ARF463BP1
ARF463AP1G* ARF463BP1G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
D
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
G S
Common Source
TO-247
125V
100A
100MHz
The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been optimized for both linear and high efficiency classes of operation.
• Specified 125 Volt, 81.36MHz Characteristics: • Output Power = 100 Watts. • Gain = 15dB (Class AB) • Efficiency = 75% (Class C)
MAXIMUM RATINGS
Symbol VDSS VDGO ID VGS PD RθJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Junction to Case
• Low Cost Common Source RF Package. • Low Vth thermal coefficient. • Low Thermal Resistance. • Optimized SOA for Superior Ruggedness.
All Ratings: TC = 25°C unless otherwise specified.
ARF463A_BP1(G) UNIT Volts Amps Volts Watts °C/W °C
500 500 9 ±30 180 0.70 -55 to 150 300
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
1
MIN
TYP
MAX
UNIT Volts
500 5.0 25 250 ±100 2 3 3
4
VDS(ON) On State Drain Voltage IDSS IGSS gfs VGS(TH)
(I D(ON) = 4.5A, VGS = 10V)
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 4.5A) Gate Threshold Voltage (VDS = VGS, ID = 50mA)
µA nA mhos
3-2006 050-4924 Rev B
5
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 50V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C RG = 1.6Ω MIN TYP
ARF463A_BP1(G)
MAX UNIT
670 120 50 5.6 4.3 13.5 4.2
ns pF
FUNCTIONAL CHARACTERISTICS
Symbol GPS η ψ Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1 Test Conditions f = 81.36 MHz VGS = 0V VDD = 125V MIN TYP MAX UNIT dB %
13 70
15 75
Pout = 100W
No Degradation in Output Power
1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein.
30 25 20
GAIN (dB)
3000 Class C VDD = 150V
Pout = 150W
CAPACITANCE (pf)
1000 500
Ciss
Coss
100 50
15 10 5 0 30
Crss
60 75 90 105 120 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency
45
10 .1 .5 1 5 10 50 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
8
ID, DRAIN CURRENT (AMPERES)
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @
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