ARF463BP1

ARF463AP1 ARF463BP1 ARF463AP1G* ARF463BP1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. D RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE G S Common Source TO-247 125V 100A 100MHz The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been optimized for both linear and high efficiency classes of operation. • Specified 125 Volt, 81.36MHz Characteristics: • Output Power = 100 Watts. • Gain = 15dB (Class AB) • Efficiency = 75% (Class C) MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD RθJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Junction to Case • Low Cost Common Source RF Package. • Low Vth thermal coefficient. • Low Thermal Resistance. • Optimized SOA for Superior Ruggedness. All Ratings: TC = 25°C unless otherwise specified. ARF463A_BP1(G) UNIT Volts Amps Volts Watts °C/W °C 500 500 9 ±30 180 0.70 -55 to 150 300 Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 1 MIN TYP MAX UNIT Volts 500 5.0 25 250 ±100 2 3 3 4 VDS(ON) On State Drain Voltage IDSS IGSS gfs VGS(TH) (I D(ON) = 4.5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 4.5A) Gate Threshold Voltage (VDS = VGS, ID = 50mA) µA nA mhos 3-2006 050-4924 Rev B 5 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 50V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C RG = 1.6Ω MIN TYP ARF463A_BP1(G) MAX UNIT 670 120 50 5.6 4.3 13.5 4.2 ns pF FUNCTIONAL CHARACTERISTICS Symbol GPS η ψ Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1 Test Conditions f = 81.36 MHz VGS = 0V VDD = 125V MIN TYP MAX UNIT dB % 13 70 15 75 Pout = 100W No Degradation in Output Power 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 30 25 20 GAIN (dB) 3000 Class C VDD = 150V Pout = 150W CAPACITANCE (pf) 1000 500 Ciss Coss 100 50 15 10 5 0 30 Crss 60 75 90 105 120 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 45 10 .1 .5 1 5 10 50 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 8 ID, DRAIN CURRENT (AMPERES) TJ = -55°C VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @