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ARF465B

ARF465B

  • 厂商:

    ADPOW

  • 封装:

  • 描述:

    ARF465B - N-CHANNEL ENHANCEMENT MODE POWER MOSFETs - Advanced Power Technology

  • 数据手册
  • 价格&库存
ARF465B 数据手册
D G S TO-247 ARF465A ARF465B Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 300V 150W 60MHz The ARF465A and 465B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz. • Specified 300 Volt, 40.68 MHz Characteristics: • Output Power = 150 Watts. • Gain = 13dB (Class C) • Efficiency = 75% • Low Cost Common Source RF Package. • Low Vth thermal coefficient. • Low Thermal Resistance. • Optimized SOA for Superior Ruggedness. All Ratings: TC = 25°C unless otherwise specified. ARF465A/B UNIT Volts MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD RθJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 1200 1200 6 ±30 250 0.50 -55 to 150 °C Amps Volts Watts °C/W 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 1 MIN TYP MAX UNIT Volts 1200 7 25 µA VDS(ON) On State Drain Voltage IDSS IGSS gfs VGS(TH) (I D(ON) = 3A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 3A) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 250 ±100 3 3 4 5 nA mhos Volts 7-2003 050-4921 Rev A CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 200V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C RG = 1.6Ω MIN TYP ARF465A/B MAX UNIT 1200 80 30 7 5 21 12 1500 100 50 15 10 34 25 ns pF FUNCTIONAL CHARACTERISTICS Symbol GPS η ψ Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 6:1 Test Conditions f = 40.68 MHz VGS = 0V VDD = 300V MIN TYP MAX UNIT dB % 13 70 15 75 Pout = 150W No Degradation in Output Power 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 25 Class C VDD = 300V 20 Pout = 150W CAPACITANCE (pf) 10,000 5000 Ciss 1000 500 GAIN (dB) 15 10 Coss 100 50 Crss 10 0.1 1 10 100 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 5 0 10 20 40 50 60 70 80 90 100 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 30 10 ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @
ARF465B 价格&库存

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