ARF473

Common Source Push-Pull Pair D G ARF473 AR S (Flange) D F47 3 RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE • Specified 135 Volt, 130 MHz Characteristics: • Output Power = 300 Watts. • Gain = 13dB (Class AB) • Efficiency = 50% MAXIMUM RATINGS Symbol VDSS ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. (each device) G 165 V 300 W 150 MHz The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz. • High Performance Push-Pull RF Package. • High Voltage Breakdown and Large SOA for Superior Ruggedness. • Low Thermal Resistance. All Ratings: TC = 25°C unless otherwise specified. ARF473 UNIT Volts Amps Volts Watts °C 500 10 ±30 500 -55 to 200 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS gfs gfs1 gfs2 Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Voltage 1 MIN TYP MAX UNIT Volts µA nA mhos 500 4 25 250 ±100 4 0.9 3 6 1.1 5 0.1 (I D(ON) = 5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 50V, VGS = 0, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 5A) Forward Transconductance Match Ratio (VDS = 25V, ID = 5A) Gate Threshold Voltage (VDS = VGS, ID = 200mA) Gate Threshold Voltage Match (VDS = VGS, ID = 200mA) / VGS(TH) ∆VGS(TH) Volts THERMAL CHARACTERISTICS Symbol RθJC RθCS Characteristic Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) MIN TYP MAX UNIT 6-2003 050-4920 Rev C 0.35 0.1 °C/W CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS (per section) Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time (Push-Pull Configuration) ARF473 Test Conditions VGS = 0V VDS = 50V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C RG = 1.6 Ω MIN TYP MAX UNIT 1200 140 9 5.1 4.1 12.8 4.0 1600 200 12 10 8 20 8 ns pF FUNCTIONAL CHARACTERISTICS Symbol GPS η ψ Characteristic Test Conditions f = 130MHz Idq = 150mA VDD = 135V MIN TYP MAX UNIT dB % Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 5:1 13 50 14 55 Pout = 300W No Degradation in Output Power 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%. APT Reserves the right to change, without notice, the specifications and information contained herein. Per transistor section unless otherwise specified. 26 24 22 GAIN (dB) Pout = 300W CAPACITANCE (pf) Class AB VDD = 125V 3000 Ciss 1000 500 Coss 100 50 20 18 16 14 12 10 0 50 75 100 125 150 FREQUENCY (MHz) Figure 1, Typical Gain vs. Frequency 25 Crss 10 .1 .5 1 5 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 12 ID, DRAIN CURRENT (AMPERES) 80 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @