ARF520

ARF520 D G APT RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE • Specified 125 Volt, 81 MHz Characteristics: • Output Power = 150 Watts. • Gain = 13dB (Class AB) • Efficiency = 50% MAXIMUM RATINGS Symbol VDSS ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. S 165 V 150 W 100 MHz The ARF520 is an RF power transistor designed for high voltage operation in narrow band ISM and MRI power amplifiers up to 100 MHz. • High Voltage Breakdown and Large SOA for Superior Ruggedness. • Industry standard package • Low Vth thermal coefficient All Ratings: TC = 25°C unless otherwise specified. ARF520 UNIT Volts Amps Volts Watts °C 500 10 ±30 250 -55 to 200 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS gfs VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Voltage 1 MIN TYP MAX UNIT Volts 500 4 25 250 ±100 4 3 6 5 (I D(ON) = 5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 50V, VGS = 0, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 5A) Gate Threshold Voltage (VDS = VGS, ID = 50mA) µA nA mhos Volts THERMAL CHARACTERISTICS Symbol RθJC RθCS Characteristic Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) MIN TYP MAX UNIT °C/W 0.7 0.1 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com 050-5930 Rev A 6-2003 DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 50V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C RG = 1.6 Ω MIN TYP MAX ARF520 UNIT 800 140 9 5.1 4.1 12.8 4.0 1200 200 12 10 8 20 8 ns pF FUNCTIONAL CHARACTERISTICS Symbol GPS η ψ Characteristic (Push-Pull Configuration) Test Conditions f = 81MHz Idq = 50mA VDD = 125V MIN TYP MAX UNIT dB % Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 5:1 13 50 14 55 Pout = 150W No Degradation in Output Power 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%. APT Reserves the right to change, without notice, the specifications and information contained herein. 24 22 20 GAIN (dB) 3000 Class AB VDD = 125V Pout = 150W CAPACITANCE (pf) Ciss 1000 500 Coss 100 50 18 16 14 12 10 Crss 50 75 100 125 150 FREQUENCY (MHz) Figure 1, Typical Gain vs. Frequency 25 10 .1 .5 1 5 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 0 12 10 ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @