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BFY90
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
• • • • Silicon NPN, To-72 packaged VHF/UHF Transistor Low Noise, 2.5 dB (typ) @ 500 MHz, 5v, 2.0 mA, 1.3 GHz Current-Gain Bandwidth Product @ 25mA IC
2 1 3 4
Power Gain, GPE = 19 dB (typ) @ 200 MHz
1. Emitter 2. Base 3. Collector 4. Case
TO-72
DESCRIPTION:
Silicon NPN transistor, designed for VHF/UHF equipment. Applications include low noise amplifier; oscillator, and mixer applications.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 2.5 50 Unit Vdc Vdc Vdc mA
Thermal Data
P
D Total Device Dissipation @ TA = 25º C Derate above 25º C 200 1.14 mWatts mW/ º C
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
BFY90
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC (off)
Symbol BVCEO ICBO Test Conditions Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCE = 15 Vdc, IE = 0 Vdc) Value Min. 15 Typ. Max. 10 Unit Vdc nA
(on)
HFE DC Current Gain (IC = 25 mAdc, VCE = 1.0 Vdc) 20 125 -
DYNAMIC
Symbol fT
NFmin
Test Conditions Current-Gain - Bandwidth Product (IC = 25 mAdc, VCE = 5 Vdc, f = 500 MHz) (IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 500 MHz
Value Min. 1.3 Typ. 2.5 Max. 5.0 2.0
Unit GHz dB pF
Cibo
Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
-
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
BFY90
FUNCTIONAL
Symbol Test Conditions Maximum Unilateral Gain (1) Maximum Stable Gain Insertion Gain IC = 8 mAdc, VCE = 10 Vdc, f = 200 MHz IC = 8 mAdc, VCE = 10 Vdc, f = 200 MHz IC = 8 mAdc, VCE = 10 Vdc, f = 200 MHz Value Min. 15 Typ. 20 22 16 Max. Unit dB dB dB
G
U max
MSG |S21|
2
Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 8 mA
f S11 S21 S12 S22
(MHz)
100 200 300 400 500 600 700 800 900 1000
|S11|
.574 .374 .292 .259 .221 .198 .185 .187 .185 .177
∠φ
-79 -130 -172 142 96 53 8.8 -38 -91 -136
|S21|
10.65 7.01 4.44 3.62 3.02 2.57 2.08 1.90 1.79 1.70
∠φ
127 105 97 92 88 80 76 76 72 61
|S12|
.023 .036 .047 .063 .072 .082 .087 .104 .117 .118
∠φ
67 60 66 63 60 58 58 58 50 44
|S22|
.788 .682 .654 .640 .617 .614 .611 .621 .620 .632
∠φ
-56 -97 -136 -178 140 98 55 10 -35 -78
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
BFY90
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
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