MMBR911LT1

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MMBR911LT1 NPN SILICON LOW NOISE, HIGH-FREQUENCY TRANSISTOR MMBR911LT1G * G Denotes RoHS Compliant, Pb Free Terminal Finish DESCRIPTION: Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package. This small–signal plastic transistor offers superior quality and performance at low cost. FEATURES: • • • • High Gain–Bandwidth Product fT = 7.0 GHz (Typ) @ 30 mA Low Noise Figure NF = 1.7 dB (Typ) @ 500 MHz High Gain GNF = 17 dB (Typ) @ 10 mA/500 MHz State–of–the–Art Technology Fine Line Geometry Ion–Implanted Arsenic Emitters Gold Top Metallization and Wires Silicon Nitride Passivation Available in tape and reel packaging options: T1 suffix = 3,000 units per reel • MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC PD(max) TSTG TJmax Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Power Dissipation @ Tcase = 75°C (1) Derate linearly above Tcase = 75°C Storage Temperature Maximum Junction Temperature Value 12 20 2.0 60 333 4.44 -55 to +150 150 Unit Vdc Vdc Vdc mA mW mW/°C ºC ºC Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 MMBR911LT1 MMBR911LT1G THERMAL CHARACTERISTICS Symbol RθJC Rating Thermal Resistance, Junction to Case Value 225 Unit °C/W ELECTRICAL SPECIFICATIONS (TC=25°C unless otherwise noted) OFF CHARACTERISTICS Symbol Characteristics Min. V(BR)CEO V(BR)CBO V(BR)EBO ICBO Collector-Emitter Breakdown Voltage (IC=1.0 mA, IB=0) Collector-Base Breakdown Voltage (IC=0.1 mA, IE=0) Emitter-Base Breakdown Voltage (IE=0.1 mA, IC=0) Collector Cutoff Current (VCB= 15 Vdc, IE=0) 12 20 2.0 Value Typ. Max. 50 Vdc Vdc Vdc nAdc Unit ON CHARACTERISTICS Symbol Characteristics Min. HFE DC Current Gain (IC=30 mAdc, VCE=10 Vdc) 30 Value Typ. Max. 200 Unit DYNAMIC CHARACTERISTICS Symbol Characteristics Min. Ccb fT Collector-Base Capacitance (VCB=10 Vdc, IE=0, f=1.0 MHz) Current Gain-Bandwidth Product (VCE=10 Vdc, IC=30 mAdc, f=1.0 GHz) Value Typ. 6.0 Max. 1.0 pF GHz Unit Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 MMBR911LT1 MMBR911LT1G FUNCTIONAL TESTS Symbol Test Conditions Min. GNF Gain @ Noise Figure (IC=10 mAdc, VCE=10 Vdc) Noise Figure (IC=10 mAdc, VCE=10 Vdc) f=0.5 GHz f=1.0 GHz f=0.5 GHz f=1.0 GHz Value Typ. 17 11 2.0 2.9 Max. dB Unit NF dB Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 MMBR911LT1 MMBR911LT1G Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 MMBR911LT1 MMBR911LT1G Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 MMBR911LT1 MMBR911LT1G Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005