MRF4427R1

MRF4427, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • Low Cost SO-8 Plastic Surface Mount Package. S-Parameter Characterization Tape and Reel Packaging Options Available Low Voltage Version of MRF3866 Maximum Available Gain – 20dB(typ) @ 200MHz R1 suffix–Tape and Reel, 500 units R2 suffix–Tape and Reel, 2500 units SO-8 DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 20 40 2.0 400 Unit Vdc Vdc Vdc mA Thermal Data P T stg R D Total Device Dissipation @ TC = 25º C Derate above 25º C Storage Temperature 1.5 12.5 -65 to + 150 Watts mW/ º C ºC º C/W θJA Thermal Resistance, Junction to Ambient 125 MRF4427.PDF 4-24-03 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF4427, R1, R2 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICEO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCE = 20 Vdc, VBE = 0 Vdc) 20 40 2.0 Value Typ. Max. .02 Unit Vdc Vdc Vdc mA (on) HFE DC Current Gain (IC = 100 mAdc, VCE = 5 Vdc) (IC = 360 mAdc, VCE = 5 Vdc) Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 20 mA) 10 5.0 60 200 mVdc VCE(sat) DYNAMIC Symbol Ftau Cob Test Conditions Min. Current-Gain Bandwidth Product (IC = 50 mAdc, VCE = 12 Vdc, f = 200 MHz) Output Capacitance (VCB = 12 Vdc, IE = 0, f = 1.0 MHz) Value Typ. 1.3 Max. 3.4 Unit GHz GHz MRF4427.PDF 4-24-03 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF4427, R1, R2 FUNCTIONAL Symbol Test Conditions Min. Maximum Unilateral Gain IC = 50 mAdc, VCE = 12 Vdc, f = 200 MHz Maximum Available Gain IC = 50 mAdc, VCE = 12 Vdc, f = 200 MHz Insertion Gain (calculated) IC = 50 mAdc, VCE = 12 Vdc, f = 200 MHz Value Typ. 18 20 14 Max. Unit dB dB dB G U max 16 18 12 MAG |S21| 2 Table 1. Common Emitter S-Parameters, @ VCE = 12 V, IC = 50 mA f S11 (MHz) 50 100 200 500 750 1000 |S11| .672 .721 .743 .768 .775 .778 ∠φ -145 -163 -174 170 161 152 S21 |S21| 20.15 10.78 5.37 2.18 1.53 1.07 ∠φ 112 96 85 63 48 36 S12 |S12| .021 .026 .037 .070 .096 .122 ∠φ 45 44 54 59 62 65 S22 |S22| .447 .271 .199 .264 .356 .437 ∠φ -59 -67 -72 -86 -98 -109 MRF4427.PDF 4-24-03 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF4427, R1, R2 RF Low Power PA, LNA, and General Purpose Discrete Selector Guide Freq (MHz) Efficiency (%) IC max (mA) Gu Max (dB) Ccb(pF) BVCEO IC max (mA) 3.5 20 30 30 1 1 3 1 1 1 2.6 12 15 25 15 15 12 15 15 15 1 15 15 12 16 2.2 0.45 1 1 1 17 10 10 12 15 400 400 400 50 40 150 30 50 35 100 200 200 30 50 40 200 200 100 70 35 30 Pout (watts) SO-8 TO-39 POWER MACRO POWER MACRO TO-39 TO-39 TO-72 MA C R O X MA C R O X TO-39 SO-8 P O W ER MA C R O P O W ER MA C R O MA C R O X MA C R O X SO-8 P O W ER MA C R O P O W ER MA C R O MRF4427, R2 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 MRF559 MRF559 2N3866A MRF555 MRF555T MRF559 MRF559 MRF8372,R1,R2 MRF557 MRF557T NPN 175 NPN 175 NPN 175 NPN 175 NPN 175 NPN 175 NPN 200 NPN 5 1 2 NPN 5 1 2 NPN 4 0 0 NPN 4 7 0 NPN 4 7 0 NPN 8 7 0 NPN 8 7 0 NPN 8 7 0 NPN 8 7 0 NPN 8 7 0 0.15 1 1.5 1.5 1.75 3 18 10 11.5 11.5 11.5 7.8 20 60 50 60 50 50 50 12 12 12.5 12.5 12.5 12.5 6 20 20 16 16 16 18 12 16 16 30 30 16 16 16 16 16 16 16 400 400 500 500 330 1000 50 150 150 400 400 400 400 150 150 200 400 400 TO-39 TO-39 SO-8 TO-72 TO-72 TO-39 TO-72 TO-72 MACRO T 2N5109 MRF5943C MRF5943, R1, R2 2N5179 2N2857 MRF517 MRF904 2N6304 BFR91 BFR96 MRF5812, R1, R2 MRF581A BFR90 BFY90 MRF914 MRF581 MRF586 MRF951 MRF571 BFR91 BFR90 NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 200 200 200 200 300 300 450 450 500 500 500 500 500 500 500 500 500 1000 1000 1000 1000 NF (dB) NF IC (mA) NF VCE GNF (dB) Package Freq (MHz) Device 3 3.4 3.4 4.5 5.5 7.5 1.5 5 1.9 2 2 2 2.4 2.5 2.5 2.5 3 1.3 1.5 2.5 3 10 30 30 1.5 50 50 5 2 2 10 50 50 2 2 5 50 90 5 10 2 2 15 15 15 6 6 15 6 5 5 10 10 10 10 5 10 10 15 6 6 5 10 15 11 14 10 8 10 15.5 14 15 11 12 11.4 15 17 13 5.5 11 14 16.5 14.5 17.8 15 18 20 15 17.8 14.5 17 1200 1000 1300 900 1600 4600 4000 1400 5000 500 5000 5000 5000 1300 4500 5000 4500 8000 8000 0.5 0.5 1 1 1.5 1.5 0.5 0.5 0.75 1.5 1.5 10 13 10 10 11 11 6.5 9.5 8 8 8 65 60 45 45 50 50 70 65 55 55 55 7.5 12.5 28 28 12.5 12.5 7.5 12.5 12.5 12.5 12.5 MACRO T SO-8 MACRO X Macro TO-72 TO-72 MACRO X TO-39 MACRO X MACRO X MACRO T MACRO T M R F 3 8 6 6 , R 1 , R 2 NPN 4 0 0 11 12.5 5000 5000 TO-39 TO-39 MRF545 MRF544 PNP NPN 14 13.5 1400 1500 Ftau (MHz) GPE (dB) GPE VCC Package Device BVCEO Type Type 2 70 70 400 400 RF (Low Power PA / General Purpose) Selection Guide RF (LNA / General Purpose) Selection Guide 1 8 2 4 3 3 2 4 1 4 MRF4427.PDF 4-24-03 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF4427, R1, R2 . PIN 1. EMITTER 2. COLLECTOR 3. COLLECTOR 4. EMITTER 5. EMITTER 6. BASE 7. BASE 8. EMITTER 8. 5. 1. 4. MRF4427.PDF 4-24-03 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.