MRF544

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF544 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, high Frequency, high breakdown Transistor Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz High Collector Base Breakdown Voltage - BVCBO = 100 V (min) High FT - 1400 MHz 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 70 100 3.0 400 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 3.5 20 Watts mW/ ºC Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF544 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO ICES Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE = 100 µAdc, IC = 0) Collector Cutoff Current (VCE = 80 Vdc, IE = 0 Vdc) Collector Cutoff Current (VCE = 80 Vdc, IE = 0 Vdc) 70 100 3.0 Value Typ. 1.0 Max. 20 100 Unit Vdc Vdc Vdc µA µA (on) HFE DC Current Gain (IC = 50 mAdc, VCE = 6.0 Vdc) 15 - DYNAMIC Symbol Test Conditions Min. COB CIB fT Output Capacitance (VCB = 10Vdc, IE=0, f=1 MHz) Input Capacitance (VEB = 3Vdc, IE=0, f=1 MHz) Current-Gain - Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 250 MHz) 1000 Value Typ. 2.5 6.1 1500 Max. Unit pF pF MHz Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF544 FUNCTIONAL Symbol Test Conditions Min. Maximum Unilateral Gain Maximum Available Gain Insertion Gain IC = 50 mAdc, VCE = 25Vdc, f = 200 MHz IC = 50 mAdc, VCE = 25Vdc, f = 200 MHz IC = 50 mAdc, VCE = 25Vdc, f = 200 MHz Value Typ. 13.5 13.5 12.7 Max. Unit dB dB dB G U max 11.7 MAG 2 |S21| Table 1. Common Emitter S-Parameters, @ VCE = 25 V, IC = 50 mA f S11 S21 S12 S22 (MHz) 100 200 300 400 500 600 700 800 900 1000 |S11| 0.221 0.219 0.250 0.329 0.338 0.348 0.371 0.374 0.402 0.438 ∠φ -143 -108 -72 -34 9 51 94 140 -170 -126 |S21| 8.54 4.36 2.98 2.39 2.11 1.83 1.61 1.44 1.45 1.56 ∠φ 97 87 79 72 70 65 61 59 63 64 |S12| 0.047 0.091 0.141 0.178 0.237 0.292 0.35 0.383 0.428 0.503 ∠φ 82 87 87 84 87 86 86 85 88 86 |S22| 0.508 0.413 0.406 0.445 0.409 0.412 0.411 0.413 0.386 0.405 ∠φ 14 49 82 108 140 176 -147 -112 -78 -42 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF544 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.