MRF581

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF581/MRF581A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective MacroX Package Macro X DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current MRF581 18 30 2.5 200 MRF581A 15 Unit Vdc Vdc Vdc mA Thermal Data P D D Total Device Dissipation @ TC = 50º C Derate above 50º C Total Device Dissipation @ TC = 25º C Derate above 25º C Storage Junction Temperature Range -65 to +150 Maximum Junction Temperature 150 ºC ºC 2.5 25 1.25 10 Watts mW/ º C Watts mW/ º C P Tstg TJmax Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF581/MRF581A ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO IEBO Test Conditions Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, VBE = 0 Vdc) Emitter Cutoff Current (VCE = 2.0 Vdc, VBE = 0 Vdc) MRF581 MRF581A Value Min. 18 15 30 2.5 Typ. Max. 0.1 0.1 Unit Vdc Vdc Vdc mA mA (on) HFE DC Current Gain (IC = 50 mAdc, VCE = 5.0 Vdc) MRF581 MRF581A 50 90 200 250 - DYNAMIC Symbol COB Ftau Test Conditions Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Current-Gain Bandwidth Product (IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz) Value Min. Typ. 2.0 5.0 Max. 3.0 Unit pF GHz Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF581/MRF581A FUNCTIONAL Symbol NFmin Test Conditions Minimum Noise Figure (IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz) Power Gain @ NFmin (IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz) Maximum Unilateral Gain (1) IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz Maximum Stable Gain IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz Insertion Gain IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz MRF581 MRF581A Value Min. 13 14 Typ. 2.5 2.0 15.5 17.8 20 15 Max. 3.0 3.0 Unit dB dB dB dB dB G G NF U max MSG |S21| 2 Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA f S11 S21 S12 S22 (MHz) 100 200 300 400 500 600 700 800 900 1000 |S11| .610 .659 .671 .675 .677 .678 .677 .679 .678 .682 ∠φ -137 -161 -171 -178 176 172 168 184 160 156 |S21| 23.8 13.2 9.0 6.8 5.5 4.6 4.0 3.5 3.1 2.8 ∠φ 116 98 89 83 77 72 68 64 60 56 |S12| .026 .033 .040 .047 .055 .064 .073 .082 .092 .102 ∠φ 46 47 51 55 58 61 62 63 64 65 |S22| .522 .351 .304 .292 .293 .299 .306 .314 .322 .311 ∠φ -78 -106 -120 -128 -132 -134 -135 -136 -138 -139 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF581/MRF581A C1, C4, C5, C6, C8, C9 — 1000 pF, Chip Capacitor C2, C3 — 1.0–10 pF, Johanson Capacitor C7, C10 — 10 µ F, Tantalum Capacitor R1 — 1.0 kΩ Res. RFC — VK–200, Ferroxcube FB — Ferrite Bead, Ferroxcube, 56–590–65/3B TL1, TL7, TL8 — Microstrip 0.162, x 0.600, TL2 — Microstrip 0.162, x 1.000, TL3 — Microstrip 0.162, x 0.800, TL4 — Microstrip 0.162, x 0.440, TL5 — Microstrip 0.120, x 0.440, TL6 — Microstrip 0.120, x 1.160, TL9, TL10 — Microstrip 0.025, x 4.250, Board Material — 0.0625, Thick Glass Teflon ε r = 2.55 Figure 1. Minimum Noise Figure and Gain @ Minimum Noise Figure. Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF581/MRF581A RF Low Power PA, LNA, and General Purpose Discrete Selector Guide R F L ow GPE Freq (MHz) Efficiency (%) IC max (mA) Gu Max (dB) NF (dB) NF IC (mA) NF VCE GN (dB) Ccb(pF) BVCEO IC max (mA) 3.5 20 30 30 1 1 3 1 1 1 2.6 12 15 25 15 15 12 15 15 15 1 15 15 12 16 2.2 17 400 400 400 50 40 150 30 50 35 100 200 200 30 50 40 200 200 Pout (watts) Freq (MHz) Package Device SO-8 TO-39 POWER MACRO POWER MACRO TO-39 TO-39 TO-72 MA C R O X MA C R O X TO-39 SO-8 POWER MACRO POWER MACRO MA C R O X MA C R O X SO-8 POWER MACRO POWER MACRO MRF4427, R2 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 MRF559 MRF559 2N3866A MRF555 MRF555T MRF559 MRF559 MRF8372,R1,R2 MRF557 MRF557T NPN NPN NPN NPN NPN NPN NPN 175 0.15 175 1 175 1.5 175 1.5 175 1.75 175 3 200 0.5 0.5 1 1 1.5 1.5 0.5 0.5 0.75 1.5 1.5 18 10 11.5 11.5 11.5 7.8 20 10 13 10 10 11 11 6.5 9.5 8 8 8 60 50 60 50 50 50 65 60 45 45 50 50 70 65 55 55 55 12 12 12.5 12.5 12.5 12.5 6 7.5 12.5 28 28 12.5 12.5 7.5 12.5 12.5 12.5 12.5 20 400 20 400 16 500 16 500 16 330 18 1000 12 50 16 16 30 30 16 16 16 16 16 16 16 150 150 400 400 400 400 150 150 200 400 400 TO-39 TO-39 SO-8 TO-72 TO-72 TO-39 TO-72 TO-72 MACRO T MACRO T SO-8 MACRO X Macro TO-72 TO-72 MACRO X TO-39 2N5109 MRF5943C NPN NPN 200 200 200 200 300 300 450 450 500 500 500 500 500 500 500 500 500 3 3.4 3.4 4.5 5.5 7.5 1.5 5 1.9 2 2 2 2.4 2.5 2.5 2.5 3 10 30 30 1.5 50 50 5 2 2 10 50 50 2 2 5 50 90 15 15 15 6 6 15 6 5 5 10 10 10 10 5 10 10 15 15 11 15.5 14 15 11 12 11.4 15 17 13 5.5 11 14 16.5 14.5 17.8 15 18 20 15 17.8 14.5 1200 1000 1300 900 1600 4600 4000 1400 5000 500 5000 5000 5000 1300 4500 5000 4500 MRF5943, R1, R2 NPN 2N5179 2N2857 MRF517 MRF904 2N6304 BFR91 BFR96 NPN NPN NPN NPN NPN NPN NPN NPN 512 NPN 512 NPN 400 NPN 470 NPN 470 NPN 870 NPN 870 NPN 870 NPN 870 NPN 870 MRF5812, R1, R2 NPN MRF581A BFR90 BFY90 MRF914 MRF581 MRF586 NPN NPN NPN NPN NPN NPN MRF3866, R1, R2 NPN 400 MACRO X MACRO X MACRO T MACRO T MRF951 MRF571 BFR91 BFR90 NPN 1 0 0 0 NPN 1 0 0 0 NPN 1 0 0 0 NPN 1 0 0 0 1.3 1.5 2.5 3 5 10 2 2 6 6 5 10 14 10 8 10 17 11 8000 8000 5000 Ftau (MHz) GPE (dB) GPE VCC Package Device BVCEO Type Type 0.45 1 1 1 10 100 10 12 15 70 35 30 12.5 5 0 0 0 TO-39 TO-39 MRF545 MRF544 PNP NPN 14 1400 2 70 400 70 400 13.5 1500 RF (Low Power PA / General Purpose) Selection Guide RF (LNA / General Purpose) Selection Guide Low Cost RF Plastic Package Options 1 2 3 4 3 2 4 1 2 8 1 5 Macro T Macro X Power Macro SO-8 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF581/MRF581A PIN 1. COLLECTOR 2. EMITTER 3. BASE 4. EMITTER 1. 4. 2. 3. Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.