MRF5812

MRF5812, R1, R2 MRF5812G, R1, R2 * G Denotes RoHS Compliant, Pb free Terminal Finish Features • • • • Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective SO-8 package SO-8 R1 suffix–Tape and Reel, 500 units R2 suffix–Tape and Reel, 2500 units DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 2.5 200 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 25ºC Derate above 25ºC 1.25 10 Watts mW/ ºC Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 MRF5812, R1, R2 MRF5812G, R1, R2 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO IEBO Test Conditions Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, VBE = 0 Vdc) Emitter Cutoff Current (VCE = 2.0 Vdc, VBE = 0 Vdc) Value Min. 15 30 2.5 Typ. Max. 0.1 0.1 Unit Vdc Vdc Vdc mA mA (on) HFE DC Current Gain (IC = 50 mAdc, VCE = 5.0 Vdc) 50 200 DYNAMIC Symbol COB Ftau Test Conditions Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Current-Gain Bandwidth Product (IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz) Value Min. Typ. 1.4 5.0 Max. 2.0 Unit pF GHz Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 MRF5812, R1, R2 MRF5812G, R1, R2 FUNCTIONAL Symbol NFmin Test Conditions Minimum Noise Figure (IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz) Power Gain @ Nfmin (IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz) Maximum Unilateral Gain (1) IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz Maximum Stable Gain IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz Insertion Gain IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz Value Min. 13 Typ. 2.0 15.5 17.8 20 15 Max. 3.0 Unit dB dB dB dB dB G G NF U max MSG |S21| 2 Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA f S11 S21 S12 S22 (MHz) 100 300 500 1000 2000 3000 |S11| .579 .593 .598 .592 .615 .691 ∠φ -141 -173 175 158 115 72 |S21| 24 8.93 5.14 2.64 1.55 1.10 ∠φ 107 85 74 52 20 -5 |S12| .024 .045 .066 .132 .310 .518 ∠φ 49 66 69 72 63 41 |S22| .397 .233 .248 .347 .531 .648 ∠φ -76 -103 -110 -119 -141 -172 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 MRF5812, R1, R2 MRF5812G, R1, R2 GPE Freq (MHz) (MHz) Pout (watts) Efficiency (%) Gu Max (dB) IC max (mA) SO-8 TO-39 POWER MACRO POWER MACRO TO-39 TO-39 TO-72 MRF4427, R2 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 NPN NPN NPN NPN NPN NPN NPN 175 0.15 175 1 175 1.5 175 1.5 175 1.75 175 3 200 18 10 11.5 11.5 11.5 7.8 20 60 50 60 50 50 50 12 12 12.5 12.5 12.5 12.5 6 20 400 20 400 16 500 16 500 16 330 18 1000 12 50 TO-39 TO-39 SO-8 TO-72 TO-72 TO-39 TO-72 TO-72 MACRO T MACRO T SO-8 MACRO X Macro TO-72 TO-72 MACRO X TO-39 2N5109 MRF5943C 2N5179 2N2857 MRF517 MRF904 2N6304 BFR91 BFR96 MRF581A BFR90 BFY90 MRF914 MRF581 MRF586 NPN 200 NPN 200 NPN 200 NPN 300 NPN 300 NPN 450 NPN 450 NPN 500 NPN 500 NPN 500 NPN 500 NPN 500 NPN 500 NPN 500 NPN 500 3 10 15 15 6 6 12 15 17 13 1200 1300 900 1600 3.5 3.4 30 15 3.4 30 4.5 1.5 5.5 50 11.4 1000 1 1 3 1 1 1 2.6 MRF5943, R1, R2 NPN 200 7.5 50 15 1.5 5 1.9 2 2 2 2.4 2.5 2.5 3 5 2 2 10 50 50 2 2 5 6 5 5 10 10 10 5 10 10 15 11 14 15 11 5.5 4600 11 14 14.5 15 18 20 15 4000 1400 500 5000 5000 1300 4500 16.5 5000 MACRO X MRF559 MACRO X MRF559 TO-39 2N3866A SO-8 MRF3866, R1, R2 POWER MACRO MRF555 POWER MACRO MRF555T NPN NPN NPN NPN NPN NPN 512 512 400 400 470 470 0.5 0.5 1 1 1.5 1.5 10 13 10 10 11 11 6.5 9.5 8 8 8 65 7.5 16 150 60 12.5 16 150 45 28 30 400 45 28 30 400 50 12.5 16 400 50 12.5 16 400 70 65 55 55 55 7.5 12.5 12.5 12.5 12.5 16 16 16 16 16 150 150 200 400 400 MRF5812, R1, R2 NPN 500 10 15.5 17.8 5000 1 2.5 50 17.8 5000 14.5 4500 2.2 90 15 MACRO X MRF559 NPN 870 0.5 MACRO X MRF559 NPN 870 0.5 SO-8 MRF8372,R1,R2 NPN 870 0.75 POWER MACRO MRF557 NPN 870 1.5 POWER MACRO MRF557T NPN 870 1.5 MACRO X MACRO X MACRO T MACRO T MRF951 MRF571 BFR91 BFR90 NPN 1000 1.3 NPN 1000 2.5 NPN 1000 3 5 2 2 6 6 5 10 14 10 8 10 17 11 8000 0.45 10 100 8000 5000 1 1 1 10 12 15 70 35 30 NPN 1000 1.5 10 12.5 5000 TO-39 TO-39 MRF545 MRF544 PNP NPN 14 1400 13.5 1500 2 RF (Low Power PA / General Purpose) Selection Guide RF (LNA / General Purpose) Selection Guide 1 1 2 3 4 3 3 2 4 2 1 8 5 4 Macro T Macro X Power Macro Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 Ccb(pF) BVCEO IC max (mA) 20 400 30 400 30 400 12 15 50 40 25 150 15 15 12 30 50 35 15 100 15 200 15 200 15 30 15 12 50 40 16 200 17 200 NF (dB) NF IC (mA) NF VCE GNF (dB) Freq (MHz) Package Device Ftau (MHz) GPE (dB) GPE VCC Package Device BVCEO Type Type 70 400 70 400 MRF5812, R1, R2 MRF5812G, R1, R2 PIN 1. EMITTER 2. COLLECTOR 3. COLLECTOR 4. EMITTER 5. EMITTER 6. BASE 7. BASE 8. EMITTER 8. 5. 1. 4. Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005