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MRF586

MRF586

  • 厂商:

    ADPOW

  • 封装:

  • 描述:

    MRF586 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS - Advanced Power Technology

  • 数据手册
  • 价格&库存
MRF586 数据手册
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF586 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, TO-39 packaged VHF/UHF Transistor Ft = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA, G U max 2 = 12.5dB (typ) @ 300 MHz, 15v, 40mA 1. Emitter 2. Base 3. Collector |S21| = 12.5dB (typ) @ 300 MHz, 15v, 40mA TO-39 DESCRIPTION: The MRF586 is a silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier, pre-driver, driver, and output stages. It is also suitable for oscillator and frequency-multiplier functions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO PD IC Parameter Collector-Emitter Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation Collector Current Value 17 35 3.0 1.0 200 Unit V V V W mA Thermal Data PD Total Device Dissipation @ TA = 25° C Derate above 25° C 1.0 5.71 Watts mW/° C ELECTRICAL SPECIFICATIONS Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF586 STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCEO BVEBO BVCBO ICBO HFE IC = 5.0 mA IE = 0.1 mA IC =1.0 mA VCB = 10 V VCE = 5.0 V IC = 50 mA 17 3.0 30 40 50 - 200 V V V µA - DYNAMIC Symbol Test Conditions f = 300 MHz f = 1.0MHz Value Min. Typ. 3.0 3.0 Max. Unit GHz pf fT COB IC = 90 mA VCB = 10V VCE = 14 V FUNCTIONAL Symbol Test Conditions Maximum Unilateral Gain (1) Maximum Available Gain Insertion Gain IC = 40 mA, VCE = 15V, f = 300 MHz IC = 40 mA, VCE = 15V, f = 300 MHz IC = 40 mA, VCE = 15V, f = 300 MHz Value Min. 10 Typ. 12.5 13.5 11.5 Max. Unit dB dB dB G U max MAG 2 |S21| Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF586 Table 1. Common Emitter S-Parameters, @ VCE = 15 V, IC = 40 mA f S11 S21 S12 S22 (MHz) 100 200 300 400 500 600 700 800 900 1000 |S11| .096 .129 .165 .185 .237 .247 .247 .238 .260 .246 ∠φ 107 114 108 115 115 112 113 118 119 116 |S21| 10.28 5.58 3.94 3.04 2.64 2.42 2.26 2.06 1.97 2.06 ∠φ 103 89 79 71 67 60 54 48 47 43 |S12| .053 .104 .160 .192 .246 .288 .326 .334 .369 .405 ∠φ 84 83 76 74 75 71 69 67 71 67 |S22| .479 .361 .356 .388 .384 .408 .417 .432 .420 .444 ∠φ -40 -49 -56 -71 -79 -82 -84 -87 -91 -92 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF586 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF586 价格&库存

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