140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MRF5943C
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
•
•
Maximum Available Gain = 17dB @ 300MHz High fT – 1.2 GHz typical
1. Emitter 2. Base 3. Collector
TO-39
DESCRIPTION: D ESCRIPTION:
Designed for general-purpose RF amplifier applications, such as pre-drivers, drivers, and oscillators.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol VCEO VCBO VEBO IC D TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation Storage Temperature Value 30 40 3.5 400 1.0 -65 to +150 Unit V V V mA W
P
°C
Thermal Data
R
TH(J-C)
Thermal Resistance, Junction – Case
125
ºC/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF5943C
ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) E LECTRICAL
STATIC
Symbol BVCEO BVCBO BVEBO ICBO ICEO hFE I C = 5 ma IB = 0 IC = 0.1 mA, IE = 0 IE = 0.1 mA, IC = 0 VCB = 15 V, VBE = 0 V VCE = 20 V, VBE = 0 V IC = 50 mA, VCE = 15 V Test Conditions Value Min. 30 40 3.5 25 Typ. Max. 50 10 300 Unit V V V µA µA
DYNAMIC
Symbol Ftau NF Test Conditions Current-Gain Bandwidth Product (IC = 35 mAdc, VCE = 15 Vdc, f = 100 MHz) IC = 35 mA IC = 10 mA VCE = 15 V VCE = 15 V f = 200 MHz f = 200 MHz Value Min. Typ. 1.2 5.5 12 Max. Unit GHz dB dB
G
U max
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF5943C
PACKAGE MECHANICAL DATA PACKAGE
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
很抱歉,暂时无法提供与“MRF5943C”相匹配的价格&库存,您可以联系我们找货
免费人工找货