MRF607

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF607 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • 12.5V Silicon NPN, TO-39 packaged VHF & UHF Transistor 1.75 Watt Minimum Power Output @ 12.5V, 175 MHz 11.5 minimum Gain @ 12.5V, 175 MHz 50% Efficiency @ 12.5V, 175 MHz 12 3 1. EMITTER 2. BASE 3. COLLECTOR TO-39 (common collector) DESCRIPTION: The MRF607 is a silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier, pre-driver, driver, and output stages. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 16 36 4.0 330 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25º C Derate above 25º C 3.5 28 Watts mW/ º C Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF607 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCES BVCEO BVEBO ICEO Test Conditions Collector-Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0 Vdc) Collector-Emitter Sustaining Voltage (IC=25 mAdc, IB=0) Emitter-Base Breakdown Voltage (IE = .5 mA, IC = 0) Collector Cutoff Current (VCE = 10 Vdc, IB = 0) Value Min. 36 16 4.0 Typ. Max. .3 Unit Vdc Vdc Vdc mA (on) HFE DC Current Gain (IC = 50 mAdc, VCE = 5.0 Vdc) 20 150 - DYNAMIC Symbol COB Test Conditions Output Capacitance (VCB = 12 Vdc, IE = 0, f = 1.0 MHz) Value Min. Typ. Max. 15 Unit pF FUNCTIONAL Symbol GPE Power Gain Test Conditions Test Circuit-Figure 1 Pout = 1.75W, VCE = 12.5Vdc f = 175 MHz Test Circuit-Figure 1 Pout = 1.75W, VCE = 12.5Vdc f = 175 MHz Value Min. 11.5 Typ. Max. Unit dB Collector Efficiency ηC 50 - - % Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF607 + L3 C5 C6 Vcc = 12.5 V L2 PIN (R S=50 OHMS) C1 L1 C4 POUT (RL=50 OHMS) C2 L4 C3 Figure 1 - 175 MHz RF AMPLIFIER CIRCUIT FOR GPE, AND EFFICIENCY SPECIFICATIONS. C1 C2 C3, C4 C5 C6 . 2.7-15 pF, ARCO 461 9.0-180 pF, ARCO 463 5.0-80 pF ARCO 462 1000 pF UNELCO 5 µF, 25 Vdc, L1 L2 L3 L4 1 TURN #20 AWG, 3/8” I.D. 3 TURNS #20 AWG, 3/8” I.D. 0.22 µH MOLDED CHOKE 0.15 µH MOLDED CHOKE WITH TANTALUM FERROXCUBE 56-590-65-3B BEAD ON GROUND LEAD Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF607 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF607 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.