MS1006

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1006 RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features F eatures • • • • • • • Optimized for SSB 30 MHz 50 Volts Common Emitter Gold Metallization POUT = 75 W Min. GP = 14 dB Gain DESCRIPTION: The MS1006 is a 50 V Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 110 55 4.0 3.25 127 +200 -65 to +150 V V V A W °C °C Thermal Data RTH(j-c) Junction-Case Thermal Resistance 2.0 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS1006 ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) E LECTRICAL STATIC Symbol Test Conditions Min. Value Typ. Max. Units BVCES BVCEO BVEBO hFE IC = 100 mA IC = 200 mA IE = 10 mA VCE = 6 V VBE = 0 V IB = 0 mA IC = 0 mA IC = 1.4 A 110 55 4.0 19 V V V 50 DYNAMIC Symbol Test Conditions Min. Value Typ. Max. Units POUT GP * IMD * ηC * COB f = 30 MHz POUT = 75 W PEP POUT = 75 W PEP POUT = 75 W PEP f = 1 MHz VCE = 50 V VCE = 50 V VCE = 50 V VCE = 50 V VCB = 50 V 75 14 -30 37 100 W dB dBc % PF Note: * f1 = 30.00 MHz, f2 = 30.01 MHz Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS1006 PACKAGE MECHANICAL DATA PACKAGE Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.